Stacking-controllable interlayer coupling and symmetric configuration of multilayered MoS2
The stacking order in layered transition-metal dichalcogenides (TMDCs) induces variations in the electronic and interlayer couplings. Therefore, controlling the stacking orientations when synthesizing TMDCs is desirable but remains a significant challenge. Here, we developed and showed the growth ki...
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Veröffentlicht in: | NPG Asia materials 2018-02, Vol.10 (2), p.e468-e468 |
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Sprache: | eng |
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Zusammenfassung: | The stacking order in layered transition-metal dichalcogenides (TMDCs) induces variations in the electronic and interlayer couplings. Therefore, controlling the stacking orientations when synthesizing TMDCs is desirable but remains a significant challenge. Here, we developed and showed the growth kinetics of different shapes and stacking orders in as-grown multi-stacked MoS
2
crystals and revealed the stacking-order-induced interlayer separations, spin–orbit couplings (SOCs), and symmetry variations. Raman spectra in AA(A…)-stacked crystals demonstrated blueshifted out-of-plane (A
1g
) and in-plane (E
2g
1
) phonon frequencies, representing a greater reduction of the van der Waals gap compared to conventional AB(A…)-stacking. Our observations, together with first-principles calculations, revealed distinct excitonic phenomena due to various stacking orientations. As a result, the photoluminescence emission was improved in the AA(A…)-stacking configuration. Additionally, calculations showed that the valence-band maxima (VBM) at the K point of the AA(A…)-stacking configuration was separated into multiple sub-bands, indicating the presence of stronger SOC. We demonstrated that AA(A…)-stacking emitted an intense second-harmonic signal (SHG) as a fingerprint of the more augmented non-centrosymmetric stacking and enabled SOC-induced splitting at the VBM. We further highlighted the superiority of four-wave mixing-correlated SHG microscopy to quickly resolve the symmetries and multi-domain crystalline phases of differently shaped crystals. Our study based on crystals with different shapes and multiple stacking configurations provides a new avenue for development of future optoelectronic devices.
Transition-metal dichalcogenides: Bringing layers into line
A method for investigating the relative alignment of stacks of two-dimensional layers has been developed by researchers in Korea. Two-dimensional materials, those just a single atom thick, have a host of unusual electronic and optical properties. Placing two-dimensional materials on top of each other to create thicker films offers a way to engineer further novel materials, but the properties of these stacks depend crucially on the relative orientation of each layer. Jong-Hyun Ahn from Yonsei University and colleagues synthesized stacks of molybdenum disulfide monolayers with various angular alignments using a technique called atmospheric-pressure chemical vapor deposition. They then characterized the structures opt |
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ISSN: | 1884-4049 1884-4057 |
DOI: | 10.1038/am.2017.226 |