Optimal conditions for fabricating CIGS nanoparticles by solvothermal method

CIGS nanoparticles (NPs) were synthesized by solvothermal method. The effects of using argon and nitrogen as autoclave atmosphere and also metallic indium (In met ) and InCl 3 as indium precursors at different temperature profiles on crystalline phase of the fabricated CIGS NPs were investigated. Results show that producing single phase CIGS in N 2 atmosphere is not possible. In Ar atmosphere, CuIn 0.5 Ga 0.5 Se 2 pure phase was formed only by using InCl 3 as indium precursor. In addition to CIGS, CuGaSe 2 can also be observed, but CIS phase is not formed by using this approach. The particle size in the range of 20–45 nm was detected by XRD and SEM images. UV–visible absorption spectrum showed a broad peak in UV–visible range. Also reported is the unusual behavior of the produced NPs in different atmospheres.