GaN Nanowire MOSFET With Near-Ideal Subthreshold Slope

Wrap-around gate GaN nanowire MOSFETs using Al 2 O 3 as gate oxide have been experimentally demonstrated. The fabricated devices exhibit a minimum subthreshold slope of 60 mV/dec, an average subthreshold slope of 68 mV/dec over three decades of drain current, drain-induced barrier lowering of 27 mV/V, an on-current of 42~\mu \text {A}/\mu \text{m} (normalized by nanowire circumference), on/off ratio over 10^{8} , an intrinsic transconductance of 27.8~\mu \text {S}/\mu \text{m} , for a switching efficiency figure of merit, {Q}={g}_{m} /SS of 0.41~\mu \text{S}/\mu \text{m} -dec/mV. These performance metrics make GaN nanowire MOSFETs a promising candidate for emerging low-power applications, such as sensors and RF for the Internet of Things.