Room Temperature Fabrication of High Quality ZrO2 Dielectric Films for High Performance Flexible Organic Transistor Applications

By using low-cost solution process and ultraviolet (UV) irradiation, we successfully fabricated high-quality ZrO 2 films at room temperature. The ZrO 2 films obtained with 1-h UV curing showed a very low leakage current ( 1.7\times 10^{-6} A/cm 2 at −3 V), a high breakdown electric field 7.9 MV/cm,...

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