Room Temperature Fabrication of High Quality ZrO2 Dielectric Films for High Performance Flexible Organic Transistor Applications

By using low-cost solution process and ultraviolet (UV) irradiation, we successfully fabricated high-quality ZrO 2 films at room temperature. The ZrO 2 films obtained with 1-h UV curing showed a very low leakage current ( 1.7\times 10^{-6} A/cm 2 at −3 V), a high breakdown electric field 7.9 MV/cm, a high bandgap (6.13 eV), and a high dielectric constant (17.8). The organic thin-film transistor made by solution-processed ZrO 2 gate dielectric shows a greatly reduced operation voltage of 4 V, and a high drain current on/off ratio of 3.1\times 10^{6} . Furthermore, we also clarified the electronic structures of ZrO 2 films with UV cured or thermal annealing. This letter demonstrated that solution-processable ZrO 2 film is promising for applications in future low power consumption electronic devices.