Prediction of highly scaled hydrogen-terminated diamond MISFET performance based on calibrated TCAD simulation

TCAD simulation is calibrated to experimental IDVD, IDVG and fT data from an H-terminated diamond MISFET from the literature. With one set of self-consistent parameters, experimental data are all well matched. In the calibration process, TCAD is used to study the possible cause of current degradation in some of the devices fabricated in the same process and it is conjectured that the degradation of low field mobility of the two-dimensional hole gas (2DHG) under the gate is the main cause of current degradation. With the calibrated parameters, a highly scaled MISFET is simulated and it is predicted that with the given fabrication process, one can achieve fT>100GHz if the gate length can be scaled down to ~0.1μm. [Display omitted] •Calibrated bulk diamond parameters for TCAD simulation•Calibrated TCAD parameters for H-terminated diamond MISFET simulation (both AC and DC)•Proposed TCAD simulation methodology for H-terminated diamond MISFET•Prediction of highly scaled diamond MISFET with fT>100GHz