Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in } } N/GaN HEMTs

Correlation of the Spatial Variation of Single-Event Transient Sensitivity With Thermoreflectance Thermography in } } N/GaN HEMTs

Spatial variations of single-event transient (SET) sensitivity in Al 0.25 Ga 0.75 N/GaN HEMTs are revealed using focused, pulsed UV laser light. SETs in regions of enhanced sensitivity have larger amplitudes and are termed "hot spots." They are the same regions where large temperature chan...

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Veröffentlicht in:IEEE transactions on nuclear science 2018-01, Vol.65 (1), p.369-375
Hauptverfasser: Khachatrian, A., Roche, N. J.-H., Ruppalt, L. B., Champlain, J. G., Buchner, S., Koehler, A. D., Anderson, T. J., Hobart, K. D., Warner, J. H., Mcmorrow, D.
Format: Artikel
Sprache:eng
Schlagworte:
Amplitudes
Defects
Gallium nitride
HEMT
HEMTs
High electron mobility transistors
Logic gates
MODFETs
pulsed lasers
Semiconductor devices
Sensitivity
Sensitivity enhancement
single-event transient (SET)
Spatial variations
Temperature
Temperature measurement
Temperature sensors
Thermography
Ultraviolet radiation
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Zusammenfassung:Spatial variations of single-event transient (SET) sensitivity in Al 0.25 Ga 0.75 N/GaN HEMTs are revealed using focused, pulsed UV laser light. SETs in regions of enhanced sensitivity have larger amplitudes and are termed "hot spots." They are the same regions where large temperature changes are observed with thermoreflectance thermography. Both effects are attributed to the presence of material defects: SETs with enhanced amplitudes have reduced decay times due to thermally assisted detrapping; increased temperature is due to carrier scattering by the same defects.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2017.2777007