Impacts of Diameter and Ge Content Variation on the Performance of Si1-xGex p-Channel Gate-All-Around Nanowire Transistors

In this work, the impacts of both nanowire diameter (D NW ) and Ge content (%) on the performance of Si 1−x Ge x Gate-all-around nanowire p -channel FETs are investigated. The variations in SiGe Gate-all-around nanowire p -channel FETs induced by D NW variation, Ge content variation, and some stocha...

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Veröffentlicht in:	IEEE transactions on nanotechnology 2018-01, Vol.17 (1), p.108-112
Hauptverfasser:	Zhang, Xianle, Liu, Xiaoyan, Yin, Longxiang, Du, Gang
Format:	Artikel
Sprache:	eng
Schlagworte:	D<named-content xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" content-type="math" xlink:type="simple"> <inline-formula> <tex-math notation="LaTeX"> {_\text{NW}}</tex-math> </inline-formula> </named-content> variation Field effect transistors Fluctuations Gallium arsenide gate-all-around nanowire p-channel FETs Ge content Ions Logic gates Nanowire diameter Nanowires Resource description framework Semiconductor devices Silicon germanides Silicon germanium stochastic process variations TCAD simulation Transistors Variation
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Zusammenfassung:	In this work, the impacts of both nanowire diameter (D NW ) and Ge content (%) on the performance of Si 1−x Ge x Gate-all-around nanowire p -channel FETs are investigated. The variations in SiGe Gate-all-around nanowire p -channel FETs induced by D NW variation, Ge content variation, and some stochastic process variations including random dopants fluctuation, gate edge roughness, and metal gate granularity are also evaluated.
ISSN:	1536-125X 1941-0085
DOI:	10.1109/TNANO.2017.2774244