Microwave dielectric properties of low-permittivity CaMgSiO4 ceramic
CaMgSiO 4 ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO 4 ceramic...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2017-10, Vol.28 (20), p.15258-15262 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Zhou, Huanfu Huang, Jin Tan, Xianghu Fan, Guangchao Chen, Xiuli Ruan, Hong |
| description | CaMgSiO
4
ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO
4
ceramic could be well densified at 1350 °C for 4 h and exhibited favorable microwave dielectric properties with relative permittivity of 7.05, quality factor of 62,500 GHz and temperature coefficient of resonant frequency of −62.9 ppm/
o
C. These results indicated that the CaMgSiO
4
ceramics might be a promising candidate for high-frequency devices fabrication. |
| doi_str_mv | 10.1007/s10854-017-7405-5 |
| format | Article |
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4
ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO
4
ceramic could be well densified at 1350 °C for 4 h and exhibited favorable microwave dielectric properties with relative permittivity of 7.05, quality factor of 62,500 GHz and temperature coefficient of resonant frequency of −62.9 ppm/
o
C. These results indicated that the CaMgSiO
4
ceramics might be a promising candidate for high-frequency devices fabrication.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-017-7405-5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Ceramics ; Characterization and Evaluation of Materials ; Chemical synthesis ; Chemistry and Materials Science ; Dielectric properties ; Diffraction patterns ; Materials Science ; Optical and Electronic Materials ; Permittivity ; Phase composition ; Q factors</subject><ispartof>Journal of materials science. Materials in electronics, 2017-10, Vol.28 (20), p.15258-15262</ispartof><rights>Springer Science+Business Media, LLC 2017</rights><rights>Journal of Materials Science: Materials in Electronics is a copyright of Springer, (2017). All Rights Reserved.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-c7a254930ddcf8864c6c2972eb845c06251ebeb53dd9684f1554e71b8f37297e3</citedby><cites>FETCH-LOGICAL-c316t-c7a254930ddcf8864c6c2972eb845c06251ebeb53dd9684f1554e71b8f37297e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-017-7405-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-017-7405-5$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Zhou, Huanfu</creatorcontrib><creatorcontrib>Huang, Jin</creatorcontrib><creatorcontrib>Tan, Xianghu</creatorcontrib><creatorcontrib>Fan, Guangchao</creatorcontrib><creatorcontrib>Chen, Xiuli</creatorcontrib><creatorcontrib>Ruan, Hong</creatorcontrib><title>Microwave dielectric properties of low-permittivity CaMgSiO4 ceramic</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>CaMgSiO
4
ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO
4
ceramic could be well densified at 1350 °C for 4 h and exhibited favorable microwave dielectric properties with relative permittivity of 7.05, quality factor of 62,500 GHz and temperature coefficient of resonant frequency of −62.9 ppm/
o
C. These results indicated that the CaMgSiO
4
ceramics might be a promising candidate for high-frequency devices fabrication.</description><subject>Ceramics</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical synthesis</subject><subject>Chemistry and Materials Science</subject><subject>Dielectric properties</subject><subject>Diffraction patterns</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Permittivity</subject><subject>Phase composition</subject><subject>Q factors</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1kMtKAzEUhoMoWKsP4G7AdTT3ZJZStQotXajgLsxkzpSUtjMmaUvf3pRx4cbV4cD3n8uH0C0l95QQ_RApMVJgQjXWgkgsz9CISs2xMOzrHI1IKTUWkrFLdBXjihCiBDcj9DT3LnSHag9F42ENLgXvij50PYTkIRZdW6y7A87txqfk9z4di0k1X777hSgchGrj3TW6aKt1hJvfOkafL88fk1c8W0zfJo8z7DhVCTtdMSlKTprGtcYo4ZRjpWZQGyEdUUxSqKGWvGlKZURLpRSgaW1arjMHfIzuhrn5vu8dxGRX3S5s80pLS8OYVoyaTNGByo_FGKC1ffCbKhwtJfYkyw6ybJZlT7KszBk2ZGJmt0sIfyb_G_oBHFJsCg</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Zhou, Huanfu</creator><creator>Huang, Jin</creator><creator>Tan, Xianghu</creator><creator>Fan, Guangchao</creator><creator>Chen, Xiuli</creator><creator>Ruan, Hong</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope></search><sort><creationdate>20171001</creationdate><title>Microwave dielectric properties of low-permittivity CaMgSiO4 ceramic</title><author>Zhou, Huanfu ; Huang, Jin ; Tan, Xianghu ; Fan, Guangchao ; Chen, Xiuli ; Ruan, Hong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-c7a254930ddcf8864c6c2972eb845c06251ebeb53dd9684f1554e71b8f37297e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Ceramics</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemical synthesis</topic><topic>Chemistry and Materials Science</topic><topic>Dielectric properties</topic><topic>Diffraction patterns</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Permittivity</topic><topic>Phase composition</topic><topic>Q factors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Huanfu</creatorcontrib><creatorcontrib>Huang, Jin</creatorcontrib><creatorcontrib>Tan, Xianghu</creatorcontrib><creatorcontrib>Fan, Guangchao</creatorcontrib><creatorcontrib>Chen, Xiuli</creatorcontrib><creatorcontrib>Ruan, Hong</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Huanfu</au><au>Huang, Jin</au><au>Tan, Xianghu</au><au>Fan, Guangchao</au><au>Chen, Xiuli</au><au>Ruan, Hong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microwave dielectric properties of low-permittivity CaMgSiO4 ceramic</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2017-10-01</date><risdate>2017</risdate><volume>28</volume><issue>20</issue><spage>15258</spage><epage>15262</epage><pages>15258-15262</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>CaMgSiO
4
ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO
4
ceramic could be well densified at 1350 °C for 4 h and exhibited favorable microwave dielectric properties with relative permittivity of 7.05, quality factor of 62,500 GHz and temperature coefficient of resonant frequency of −62.9 ppm/
o
C. These results indicated that the CaMgSiO
4
ceramics might be a promising candidate for high-frequency devices fabrication.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-017-7405-5</doi><tpages>5</tpages></addata></record> |
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| subjects | Ceramics Characterization and Evaluation of Materials Chemical synthesis Chemistry and Materials Science Dielectric properties Diffraction patterns Materials Science Optical and Electronic Materials Permittivity Phase composition Q factors |
| title | Microwave dielectric properties of low-permittivity CaMgSiO4 ceramic |
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