Microwave dielectric properties of low-permittivity CaMgSiO4 ceramic

CaMgSiO 4 ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO 4 ceramic...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2017-10, Vol.28 (20), p.15258-15262
Hauptverfasser: Zhou, Huanfu, Huang, Jin, Tan, Xianghu, Fan, Guangchao, Chen, Xiuli, Ruan, Hong
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Sprache:eng
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Zusammenfassung:CaMgSiO 4 ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO 4 ceramic could be well densified at 1350 °C for 4 h and exhibited favorable microwave dielectric properties with relative permittivity of 7.05, quality factor of 62,500 GHz and temperature coefficient of resonant frequency of −62.9 ppm/ o C. These results indicated that the CaMgSiO 4 ceramics might be a promising candidate for high-frequency devices fabrication.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-017-7405-5