Microwave dielectric properties of low-permittivity CaMgSiO4 ceramic
CaMgSiO 4 ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO 4 ceramic...
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Veröffentlicht in: | Journal of materials science. Materials in electronics 2017-10, Vol.28 (20), p.15258-15262 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
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Zusammenfassung: | CaMgSiO
4
ceramic was synthesized via the conventional solid state reaction method and its phase composition, microstructure and microwave dielectric properties were studied. X-ray diffraction patterns showed that the ceramic was a single-phase and no other phase was observed. The CaMgSiO
4
ceramic could be well densified at 1350 °C for 4 h and exhibited favorable microwave dielectric properties with relative permittivity of 7.05, quality factor of 62,500 GHz and temperature coefficient of resonant frequency of −62.9 ppm/
o
C. These results indicated that the CaMgSiO
4
ceramics might be a promising candidate for high-frequency devices fabrication. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-017-7405-5 |