Photodiodes: Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes (Adv. Funct. Mater. 48/2017)

In article number 1704475, Moon Sung Kang, Jeong Ho Cho, and co‐workers demonstrate a new organic vertical p‐n heterojunction photodiode structure that is stacked onto the graphene electrodes. Controlling the Schottky barrier height at the p‐type organic semiconductor‐graphene junction can i) suppress the dark current density and ii) enhance the photocurrent of the device, both of which are critical to improve the performance of a photodiode.