Emerging Nanoscale Memory and Logic Devices: A Critical Assessment

This article presents the ERD Working Group's collective judgment with respect to the long-term potential of nanoscale memory and logic devices to replace silicon-based CMOS logic or baseline memory technology. It does not judge their potential to supplement or complement CMOS. The intent is th...

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Veröffentlicht in:	Computer (Long Beach, Calif.) Calif.), 2008-05, Vol.41 (5), p.28-32
Hauptverfasser:	Hutchby, J.A., Cavin, R., Zhirnov, V., Brewer, J.E., Bourianoff, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Assessments Classical and quantum physics: mechanics and fields CMOS CMOS logic circuits CMOS technology Complement Computer memory Devices Electronics Exact sciences and technology FETs Functional analytical methods Information storage Information technology Integrated circuit technology ITRS Logic Logic devices memory Miscellaneous MOSFET MOSFET circuits Nanocomposites Nanomaterials Nanoscale devices Nanostructure Nanotechnology Physics Power dissipation Quantum mechanics Semiconductor research Silicon Storage and reproduction of information Switches
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Beschreibung
Zusammenfassung:	This article presents the ERD Working Group's collective judgment with respect to the long-term potential of nanoscale memory and logic devices to replace silicon-based CMOS logic or baseline memory technology. It does not judge their potential to supplement or complement CMOS. The intent is thus prescriptive, not prescriptive: to provide a technically grounded, objective benchmark for emerging research memory and logic devices.
ISSN:	0018-9162 1558-0814
DOI:	10.1109/MC.2008.154