Stable MoS2 Field‐Effect Transistors Using TiO2 Interfacial Layer at Metal/MoS2 Contact

Molybdenum disulphide (MoS2) is an emerging 2‐dimensional (2D) semiconductor for electronic devices. However, unstable and low performance of MoS2 FETs is an important concern. In this study, inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer between contact metal and MoS2 channel is suggested to achieve more stable performances. The reduced threshold voltage (VTH) shift and reduced series resistance (RSD) were simultaneously achieved. Unstable and low performance of MoS2 FETs is a serious issue in practical applications. An approach to achieve a more stable performance of MoS2 FETs is suggested by inserting an atomic layer deposition (ALD) titanium dioxide (TiO2) interfacial layer. The reduced threshold voltage (VTH) shift was observed after 10 000 s of +10 V gate bias stress.