Lifetime and migration length of B-related admolecules on diamond {100}-surface: Comparative study of hot-filament and microwave plasma-enhanced chemical vapor deposition

•B incorporation behavior into {100}-surface were compared between HF and MWCVD.•Lifetime (τ) and surface migration (χB) of B-related admolecules were calculated.•Longer τ and χB were evidenced for HF growth due to less impact of surface etching.•Enhanced growth rate by B-doping was firstly confirme...

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Veröffentlicht in:Journal of crystal growth 2017-12, Vol.479, p.52-58
Hauptverfasser: Ohmagari, Shinya, Ogura, Masahiko, Umezawa, Hitoshi, Mokuno, Yoshiaki
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Sprache:eng
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Zusammenfassung:•B incorporation behavior into {100}-surface were compared between HF and MWCVD.•Lifetime (τ) and surface migration (χB) of B-related admolecules were calculated.•Longer τ and χB were evidenced for HF growth due to less impact of surface etching.•Enhanced growth rate by B-doping was firstly confirmed. The growth of heavily B-doped low-resistivity diamond films will facilitate the development of novel semiconductor applications. To discuss the key factors that increase B solubility into single-crystal {100} diamond, the misorientation-angle (θmis) dependences of B incorporation were compared between hot filament (HF) and microwave plasma (MW)-enhanced chemical vapor deposition. Based on the model that considers the step-flow motion, the lifetime of B-related admolecules (τ) on terrace surface was evaluated. We found that τ can be extended more than ∼13 times by utilizing HF growth. As a result, the longer migration length of B-related admolecules (χB) was evidenced. Conversely, shorter τ and χB were revealed for MW growth which limit the B incorporation (probably due to etching). This study will provide an important insight to increase the B solubility.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2017.09.022