Femtosecond-Laser Irradiation onto Sapphire Substrates in an N2 Ambient Atmosphere

The authors propose a new technique for forming periodic nitride structures on sapphire substrates. These fine structures were formed only by femtosecond-laser irradiation in N2 ambient. Higher count values of nitrogen ions (CN-) were detected by TOF-SIMS, which demonstrates that nitrogenrelated bon...

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Veröffentlicht in:Physica status solidi. C 2017-11, Vol.14 (11)
Hauptverfasser: Miyagawa, Reina, Goto, Kenzo, Eryu, Osamu
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:The authors propose a new technique for forming periodic nitride structures on sapphire substrates. These fine structures were formed only by femtosecond-laser irradiation in N2 ambient. Higher count values of nitrogen ions (CN-) were detected by TOF-SIMS, which demonstrates that nitrogenrelated bonds were formed.
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201770011