Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017)
Jonathan D. Poplawsky and co‐workers demonstrate a scanning transmission electron microscopy (STEM) verified method for atom probe tomography (APT) to accurately quantify Si/SiGe interfaces with 1Å precision in article number 1700622. The image depicts the atom probe field evaporation process with S...
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| Veröffentlicht in: | Advanced materials interfaces 2017-11, Vol.4 (21), p.n/a |
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| creator | Dyck, Ondrej Leonard, Donovan N. Edge, Lisa F. Jackson, Clayton A. Pritchett, Emily J. Deelman, Peter W. Poplawsky, Jonathan D. |
| description | Jonathan D. Poplawsky and co‐workers demonstrate a scanning transmission electron microscopy (STEM) verified method for atom probe tomography (APT) to accurately quantify Si/SiGe interfaces with 1Å precision in article number 1700622. The image depicts the atom probe field evaporation process with Si and Ge atoms field evaporating and being detected from a needle shaped SiGe specimen. The APT results are compared to STEM data after the post‐reconstruction process, and the results are in good agreement. |
| doi_str_mv | 10.1002/admi.201770110 |
| format | Article |
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The APT results are compared to STEM data after the post‐reconstruction process, and the results are in good agreement.</description><subject>atom probe tomography</subject><subject>Germanium</subject><subject>interfacial measurements</subject><subject>Scanning transmission electron microscopy</subject><subject>Si/SiGe</subject><subject>Silicon</subject><subject>Silicon germanides</subject><subject>Tomography</subject><subject>Transmission electron microscopy</subject><subject>z‐redistribution</subject><issn>2196-7350</issn><issn>2196-7350</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkE9LwzAYh4MoOKZXzwEvemiXP2vSeitT52BDZfNcsjTRjLWZSTvZJ_BrmzJxHgQh8Obwe37vywPABUYxRogMRFmZmCDMOcIYHYEewRmLOE3Q8a__KTj3foVQyBBMUtoDn3ljK_jk7FLBha3sqxObt90NzKVsnWgUfG5F3RhtpGiMraHVcG4GczNWcFI3ymkhVYdrs1Yebo2AfxbCq7zcxnAWGl18ID0keNBdfX0GTrRYe3X-Pfvg5f5uMXqIpo_jySifRhInHEVpotOypFgnPGNKymWKmUpSTYeUMSwFRSnjhGidcYqYkJRQRglCYljy8BTtg8t978bZ91b5pljZ1tVhZREksSGinGchFe9T0lnvndLFxplKuF2BUdH5LjrfxY_vAGR74CN42P2TLvLb2eTAfgGjMIG7</recordid><startdate>20171101</startdate><enddate>20171101</enddate><creator>Dyck, Ondrej</creator><creator>Leonard, Donovan N.</creator><creator>Edge, Lisa F.</creator><creator>Jackson, Clayton A.</creator><creator>Pritchett, Emily J.</creator><creator>Deelman, Peter W.</creator><creator>Poplawsky, Jonathan D.</creator><general>John Wiley & Sons, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20171101</creationdate><title>Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. 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Interfaces 21/2017)</title><author>Dyck, Ondrej ; Leonard, Donovan N. ; Edge, Lisa F. ; Jackson, Clayton A. ; Pritchett, Emily J. ; Deelman, Peter W. ; Poplawsky, Jonathan D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1570-85f8dd31f5796eccb816e58f343661ca3086722ff97306ac32363200a4d74d7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>atom probe tomography</topic><topic>Germanium</topic><topic>interfacial measurements</topic><topic>Scanning transmission electron microscopy</topic><topic>Si/SiGe</topic><topic>Silicon</topic><topic>Silicon germanides</topic><topic>Tomography</topic><topic>Transmission electron microscopy</topic><topic>z‐redistribution</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dyck, Ondrej</creatorcontrib><creatorcontrib>Leonard, Donovan N.</creatorcontrib><creatorcontrib>Edge, Lisa F.</creatorcontrib><creatorcontrib>Jackson, Clayton A.</creatorcontrib><creatorcontrib>Pritchett, Emily J.</creatorcontrib><creatorcontrib>Deelman, Peter W.</creatorcontrib><creatorcontrib>Poplawsky, Jonathan D.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Advanced materials interfaces</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dyck, Ondrej</au><au>Leonard, Donovan N.</au><au>Edge, Lisa F.</au><au>Jackson, Clayton A.</au><au>Pritchett, Emily J.</au><au>Deelman, Peter W.</au><au>Poplawsky, Jonathan D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. 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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | atom probe tomography Germanium interfacial measurements Scanning transmission electron microscopy Si/SiGe Silicon Silicon germanides Tomography Transmission electron microscopy z‐redistribution |
| title | Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017) |
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