Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017)

Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017)

Jonathan D. Poplawsky and co‐workers demonstrate a scanning transmission electron microscopy (STEM) verified method for atom probe tomography (APT) to accurately quantify Si/SiGe interfaces with 1Å precision in article number 1700622. The image depicts the atom probe field evaporation process with S...

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Veröffentlicht in:Advanced materials interfaces 2017-11, Vol.4 (21), p.n/a
Hauptverfasser: Dyck, Ondrej, Leonard, Donovan N., Edge, Lisa F., Jackson, Clayton A., Pritchett, Emily J., Deelman, Peter W., Poplawsky, Jonathan D.
Format: Artikel
Sprache:eng
Schlagworte:
atom probe tomography
Germanium
interfacial measurements
Scanning transmission electron microscopy
Si/SiGe
Silicon
Silicon germanides
Tomography
Transmission electron microscopy
z‐redistribution
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Zusammenfassung:Jonathan D. Poplawsky and co‐workers demonstrate a scanning transmission electron microscopy (STEM) verified method for atom probe tomography (APT) to accurately quantify Si/SiGe interfaces with 1Å precision in article number 1700622. The image depicts the atom probe field evaporation process with Si and Ge atoms field evaporating and being detected from a needle shaped SiGe specimen. The APT results are compared to STEM data after the post‐reconstruction process, and the results are in good agreement.
ISSN:2196-7350
2196-7350
DOI:10.1002/admi.201770110