Fabrication of ultra-low antireflection SiNWs arrays from mc-Si using one step MACE

In this work, SiNWs arrays were fabricated from mc-Si wafer using one step nano-silver catalyzed chemical etching method. The effect of AgNO 3 concentration on morphology structure, antireflection property and effective carrier lifetime of textured mc-Si were carefully studied. The results indicate that the length and inter spacing of SiNWs arrays are conducive for improving antireflection property of SiNWs arrays, but the increasing etching seriously deteriorates effective carrier lifetime. Moreover, KOH correction of SiNWs was performed to further reduce the reflectance loss, which is also conducive to reduce the photo-generated carrier recombination. Under preference immersion time of 240 s, a large scale SiNWs arrays with the ultra-low antireflection ability of ~3.4% and excellent effective carrier lifetime of 3.30 μs can be obtained, which shows a great significance for producing high-efficiency polysilicon solar cells.