Invariance of multifractal spectrums of spatial forms on the surface of ZnxCd1-xTe – Si heterocompositions synthesized by electron beam epitaxy and hot wall epitaxy
[Display omitted] •Surface of the ZnXCd1-XTe layers grown by the electron beam epitaxy and the hot wall epitaxy.•Multifractal analysis of surface nanoforms formed the surface relief of the ZnXCd1-XTe layers.•Comparison of MF spectrums of the layer surfaces obtained by different technologies. Multifr...
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Veröffentlicht in: | Journal of crystal growth 2017-10, Vol.475, p.144-149 |
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container_title | Journal of crystal growth |
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creator | Moskvin, P.P. Kryzhanivskyy, V.B. Rashkovetskyi, L.V. Rudnitskyi, V.A. Morozov, A.V. Lytvyn, P.M. |
description | [Display omitted]
•Surface of the ZnXCd1-XTe layers grown by the electron beam epitaxy and the hot wall epitaxy.•Multifractal analysis of surface nanoforms formed the surface relief of the ZnXCd1-XTe layers.•Comparison of MF spectrums of the layer surfaces obtained by different technologies.
Multifractal (MF) analysis is applied for the description of spatial nanoforms which form a relief on a surface of heterostructures of ZnxCd1-xTe solid solution – substrate Si (111) synthesized by the method of the electron beam with the evaporating anode. The input data for the MF analysis were the AFM (atomic force microscopy) images of the surface of layers. Comparison of parameters of MF spectrums for different geometries of the surface relief of the layers obtained at identical temperatures and approximately identical growth rates by the above mentioned method of growth and the method of hot wall epitaxy has been performed.
It was shown that within the error limits, MF spectrums of spatial nanoforms for heterostructures ZnxCd1-xTe – Si remained very similar under identical conditions for synthesis of layers for compared techniques. |
doi_str_mv | 10.1016/j.jcrysgro.2017.06.010 |
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•Surface of the ZnXCd1-XTe layers grown by the electron beam epitaxy and the hot wall epitaxy.•Multifractal analysis of surface nanoforms formed the surface relief of the ZnXCd1-XTe layers.•Comparison of MF spectrums of the layer surfaces obtained by different technologies.
Multifractal (MF) analysis is applied for the description of spatial nanoforms which form a relief on a surface of heterostructures of ZnxCd1-xTe solid solution – substrate Si (111) synthesized by the method of the electron beam with the evaporating anode. The input data for the MF analysis were the AFM (atomic force microscopy) images of the surface of layers. Comparison of parameters of MF spectrums for different geometries of the surface relief of the layers obtained at identical temperatures and approximately identical growth rates by the above mentioned method of growth and the method of hot wall epitaxy has been performed.
It was shown that within the error limits, MF spectrums of spatial nanoforms for heterostructures ZnxCd1-xTe – Si remained very similar under identical conditions for synthesis of layers for compared techniques.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2017.06.010</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Multifractal analysis ; A1. Self-similarity and self-organization ; A1. Surface structure ; Atomic force microscopy ; B1. Nanomaterials ; B2. II-VI semiconductor materials ; Cadmium zinc tellurides ; Chemical synthesis ; Electron beams ; Electrons ; Epitaxial growth ; Fractals ; Heterostructures ; Silicon substrates ; Studies</subject><ispartof>Journal of crystal growth, 2017-10, Vol.475, p.144-149</ispartof><rights>2017 Elsevier B.V.</rights><rights>Copyright Elsevier BV Oct 1, 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-897a363762d049c18777d25a96e6c71f708c031d39a28943fc1bb5c5cd03e6893</citedby><cites>FETCH-LOGICAL-c340t-897a363762d049c18777d25a96e6c71f708c031d39a28943fc1bb5c5cd03e6893</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2017.06.010$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids></links><search><creatorcontrib>Moskvin, P.P.</creatorcontrib><creatorcontrib>Kryzhanivskyy, V.B.</creatorcontrib><creatorcontrib>Rashkovetskyi, L.V.</creatorcontrib><creatorcontrib>Rudnitskyi, V.A.</creatorcontrib><creatorcontrib>Morozov, A.V.</creatorcontrib><creatorcontrib>Lytvyn, P.M.</creatorcontrib><title>Invariance of multifractal spectrums of spatial forms on the surface of ZnxCd1-xTe – Si heterocompositions synthesized by electron beam epitaxy and hot wall epitaxy</title><title>Journal of crystal growth</title><description>[Display omitted]
•Surface of the ZnXCd1-XTe layers grown by the electron beam epitaxy and the hot wall epitaxy.•Multifractal analysis of surface nanoforms formed the surface relief of the ZnXCd1-XTe layers.•Comparison of MF spectrums of the layer surfaces obtained by different technologies.
Multifractal (MF) analysis is applied for the description of spatial nanoforms which form a relief on a surface of heterostructures of ZnxCd1-xTe solid solution – substrate Si (111) synthesized by the method of the electron beam with the evaporating anode. The input data for the MF analysis were the AFM (atomic force microscopy) images of the surface of layers. Comparison of parameters of MF spectrums for different geometries of the surface relief of the layers obtained at identical temperatures and approximately identical growth rates by the above mentioned method of growth and the method of hot wall epitaxy has been performed.
It was shown that within the error limits, MF spectrums of spatial nanoforms for heterostructures ZnxCd1-xTe – Si remained very similar under identical conditions for synthesis of layers for compared techniques.</description><subject>A1. Multifractal analysis</subject><subject>A1. Self-similarity and self-organization</subject><subject>A1. Surface structure</subject><subject>Atomic force microscopy</subject><subject>B1. Nanomaterials</subject><subject>B2. II-VI semiconductor materials</subject><subject>Cadmium zinc tellurides</subject><subject>Chemical synthesis</subject><subject>Electron beams</subject><subject>Electrons</subject><subject>Epitaxial growth</subject><subject>Fractals</subject><subject>Heterostructures</subject><subject>Silicon substrates</subject><subject>Studies</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkUGO1DAQRS0EEs3AFZAl1gnlOG0nO1ALhpFGYsGwYWO57QrtKImD7QwdVtyBO3AwToKjZtZsbOm73i_5f0JeMigZMPG6L3sT1vg1-LICJksQJTB4RHaskbzYA1SPyS6fVQFV3Twlz2LsATLJYEd-30z3Ojg9GaS-o-MyJNcFbZIeaJzRpLCMcXuJs04ui50PmzDRdEIal9DpC_llOh8sK853SP_8_EU_OXrChMEbP84-uuT8FGlcp4xF9wMtPa4Uh21B9jqiHinOLunzSvVk6ckn-l0Pw4P4nDzp9BDxxb_7inx-_-7u8KG4_Xh9c3h7WxheQyqaVmouuBSVhbo1OQApbbXXrUBhJOskNAY4s7zVVdPWvDPseNybvbHAUTQtvyKvLr5z8N8WjEn1fglTXqlYKwTIGoTIU-IyZYKPMWCn5uBGHVbFQG2dqF49dKK2ThQIlTvJ4JsLiPkP9w6DisZhzt66kKNQ1rv_WfwFWaKc3Q</recordid><startdate>20171001</startdate><enddate>20171001</enddate><creator>Moskvin, P.P.</creator><creator>Kryzhanivskyy, V.B.</creator><creator>Rashkovetskyi, L.V.</creator><creator>Rudnitskyi, V.A.</creator><creator>Morozov, A.V.</creator><creator>Lytvyn, P.M.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20171001</creationdate><title>Invariance of multifractal spectrums of spatial forms on the surface of ZnxCd1-xTe – Si heterocompositions synthesized by electron beam epitaxy and hot wall epitaxy</title><author>Moskvin, P.P. ; Kryzhanivskyy, V.B. ; Rashkovetskyi, L.V. ; Rudnitskyi, V.A. ; Morozov, A.V. ; Lytvyn, P.M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-897a363762d049c18777d25a96e6c71f708c031d39a28943fc1bb5c5cd03e6893</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>A1. Multifractal analysis</topic><topic>A1. Self-similarity and self-organization</topic><topic>A1. Surface structure</topic><topic>Atomic force microscopy</topic><topic>B1. Nanomaterials</topic><topic>B2. II-VI semiconductor materials</topic><topic>Cadmium zinc tellurides</topic><topic>Chemical synthesis</topic><topic>Electron beams</topic><topic>Electrons</topic><topic>Epitaxial growth</topic><topic>Fractals</topic><topic>Heterostructures</topic><topic>Silicon substrates</topic><topic>Studies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moskvin, P.P.</creatorcontrib><creatorcontrib>Kryzhanivskyy, V.B.</creatorcontrib><creatorcontrib>Rashkovetskyi, L.V.</creatorcontrib><creatorcontrib>Rudnitskyi, V.A.</creatorcontrib><creatorcontrib>Morozov, A.V.</creatorcontrib><creatorcontrib>Lytvyn, P.M.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moskvin, P.P.</au><au>Kryzhanivskyy, V.B.</au><au>Rashkovetskyi, L.V.</au><au>Rudnitskyi, V.A.</au><au>Morozov, A.V.</au><au>Lytvyn, P.M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Invariance of multifractal spectrums of spatial forms on the surface of ZnxCd1-xTe – Si heterocompositions synthesized by electron beam epitaxy and hot wall epitaxy</atitle><jtitle>Journal of crystal growth</jtitle><date>2017-10-01</date><risdate>2017</risdate><volume>475</volume><spage>144</spage><epage>149</epage><pages>144-149</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>[Display omitted]
•Surface of the ZnXCd1-XTe layers grown by the electron beam epitaxy and the hot wall epitaxy.•Multifractal analysis of surface nanoforms formed the surface relief of the ZnXCd1-XTe layers.•Comparison of MF spectrums of the layer surfaces obtained by different technologies.
Multifractal (MF) analysis is applied for the description of spatial nanoforms which form a relief on a surface of heterostructures of ZnxCd1-xTe solid solution – substrate Si (111) synthesized by the method of the electron beam with the evaporating anode. The input data for the MF analysis were the AFM (atomic force microscopy) images of the surface of layers. Comparison of parameters of MF spectrums for different geometries of the surface relief of the layers obtained at identical temperatures and approximately identical growth rates by the above mentioned method of growth and the method of hot wall epitaxy has been performed.
It was shown that within the error limits, MF spectrums of spatial nanoforms for heterostructures ZnxCd1-xTe – Si remained very similar under identical conditions for synthesis of layers for compared techniques.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2017.06.010</doi><tpages>6</tpages></addata></record> |
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subjects | A1. Multifractal analysis A1. Self-similarity and self-organization A1. Surface structure Atomic force microscopy B1. Nanomaterials B2. II-VI semiconductor materials Cadmium zinc tellurides Chemical synthesis Electron beams Electrons Epitaxial growth Fractals Heterostructures Silicon substrates Studies |
title | Invariance of multifractal spectrums of spatial forms on the surface of ZnxCd1-xTe – Si heterocompositions synthesized by electron beam epitaxy and hot wall epitaxy |
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