Invariance of multifractal spectrums of spatial forms on the surface of ZnxCd1-xTe – Si heterocompositions synthesized by electron beam epitaxy and hot wall epitaxy

[Display omitted] •Surface of the ZnXCd1-XTe layers grown by the electron beam epitaxy and the hot wall epitaxy.•Multifractal analysis of surface nanoforms formed the surface relief of the ZnXCd1-XTe layers.•Comparison of MF spectrums of the layer surfaces obtained by different technologies. Multifr...

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Veröffentlicht in:Journal of crystal growth 2017-10, Vol.475, p.144-149
Hauptverfasser: Moskvin, P.P., Kryzhanivskyy, V.B., Rashkovetskyi, L.V., Rudnitskyi, V.A., Morozov, A.V., Lytvyn, P.M.
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Sprache:eng
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Zusammenfassung:[Display omitted] •Surface of the ZnXCd1-XTe layers grown by the electron beam epitaxy and the hot wall epitaxy.•Multifractal analysis of surface nanoforms formed the surface relief of the ZnXCd1-XTe layers.•Comparison of MF spectrums of the layer surfaces obtained by different technologies. Multifractal (MF) analysis is applied for the description of spatial nanoforms which form a relief on a surface of heterostructures of ZnxCd1-xTe solid solution – substrate Si (111) synthesized by the method of the electron beam with the evaporating anode. The input data for the MF analysis were the AFM (atomic force microscopy) images of the surface of layers. Comparison of parameters of MF spectrums for different geometries of the surface relief of the layers obtained at identical temperatures and approximately identical growth rates by the above mentioned method of growth and the method of hot wall epitaxy has been performed. It was shown that within the error limits, MF spectrums of spatial nanoforms for heterostructures ZnxCd1-xTe – Si remained very similar under identical conditions for synthesis of layers for compared techniques.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2017.06.010