Synthesis of multi-layer graphene films on silica using physical vapour deposition
Carbon films and underlying copper template-layers have been deposited energetically in the same filtered cathodic vacuum arc system at 750 °C. The high quality copper template-layers were supported on either silicon or silica and were subsequently sacrificially etched. On silicon, copper silicide f...
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| Veröffentlicht in: | Carbon (New York) 2017-10, Vol.123, p.683-687 |
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| container_title | Carbon (New York) |
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| creator | Oldfield, Daniel T. Huynh, Chi P. Hawkins, Stephen C. Partridge, James G. McCulloch, Dougal G. |
| description | Carbon films and underlying copper template-layers have been deposited energetically in the same filtered cathodic vacuum arc system at 750 °C. The high quality copper template-layers were supported on either silicon or silica and were subsequently sacrificially etched. On silicon, copper silicide formed during the copper deposition process, inhibiting ordered growth in the carbon film. On silica, large areas of multi-layer graphene (up to ∼10 layers) oriented parallel to the substrate were synthesised and these remained intact after the sacrificial etching process. The ability to produce both copper and multilayer graphene layers in one system enables simplified fabrication of this material.
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| doi_str_mv | 10.1016/j.carbon.2017.08.014 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1962261206</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S000862231730800X</els_id><sourcerecordid>1962261206</sourcerecordid><originalsourceid>FETCH-LOGICAL-c380t-e9fb2a5dfafba9c1d61a7ed0c0ca4b880fb855069a1bbc39e9ff6dd3220c5f583</originalsourceid><addsrcrecordid>eNp9UMtqwzAQFKWFpmn_oAdBz3ZXfsqXQgl9QaDQx1nIeiQyjuRKdsB_XwX33NMy7MzsziB0SyAlQKr7LhXct86mGZA6BZoCKc7QitA6T3LakHO0AgCaVFmWX6KrELoIC0qKFfr4nO24V8EE7DQ-TP1okp7PyuOd58NeWYW16Q9xa3EwvREcT8HYHR72c4iox0c-uMljqQYXzGicvUYXmvdB3fzNNfp-fvravCbb95e3zeM2ETmFMVGNbjNeSs11yxtBZEV4rSQIELxoKQXd0rKEquGkbUXeRL6upMyzDESpS5qv0d3iO3j3M6kwsi4-YuNJRpoYtSIZVJFVLCzhXQheaTZ4c-B-ZgTYqT3WsaU9dmqPAWWxvSh7WGQqJjga5VkQRlmhpPFKjEw687_BLxZKfG8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1962261206</pqid></control><display><type>article</type><title>Synthesis of multi-layer graphene films on silica using physical vapour deposition</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Oldfield, Daniel T. ; Huynh, Chi P. ; Hawkins, Stephen C. ; Partridge, James G. ; McCulloch, Dougal G.</creator><creatorcontrib>Oldfield, Daniel T. ; Huynh, Chi P. ; Hawkins, Stephen C. ; Partridge, James G. ; McCulloch, Dougal G.</creatorcontrib><description>Carbon films and underlying copper template-layers have been deposited energetically in the same filtered cathodic vacuum arc system at 750 °C. The high quality copper template-layers were supported on either silicon or silica and were subsequently sacrificially etched. On silicon, copper silicide formed during the copper deposition process, inhibiting ordered growth in the carbon film. On silica, large areas of multi-layer graphene (up to ∼10 layers) oriented parallel to the substrate were synthesised and these remained intact after the sacrificial etching process. The ability to produce both copper and multilayer graphene layers in one system enables simplified fabrication of this material.
[Display omitted]</description><identifier>ISSN: 0008-6223</identifier><identifier>EISSN: 1873-3891</identifier><identifier>DOI: 10.1016/j.carbon.2017.08.014</identifier><language>eng</language><publisher>New York: Elsevier Ltd</publisher><subject>Arc deposition ; Carbon ; Chemical vapor deposition ; Copper ; Energetic deposition ; Etching ; Filter cathodic vacuum arc ; Graphene ; Graphitic carbon ; Intermetallic compounds ; Physical vapor deposition ; Silicides ; Silicon dioxide ; Substrates</subject><ispartof>Carbon (New York), 2017-10, Vol.123, p.683-687</ispartof><rights>2017 Elsevier Ltd</rights><rights>Copyright Elsevier BV Oct 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c380t-e9fb2a5dfafba9c1d61a7ed0c0ca4b880fb855069a1bbc39e9ff6dd3220c5f583</citedby><cites>FETCH-LOGICAL-c380t-e9fb2a5dfafba9c1d61a7ed0c0ca4b880fb855069a1bbc39e9ff6dd3220c5f583</cites><orcidid>0000-0001-8296-0707</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.carbon.2017.08.014$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Oldfield, Daniel T.</creatorcontrib><creatorcontrib>Huynh, Chi P.</creatorcontrib><creatorcontrib>Hawkins, Stephen C.</creatorcontrib><creatorcontrib>Partridge, James G.</creatorcontrib><creatorcontrib>McCulloch, Dougal G.</creatorcontrib><title>Synthesis of multi-layer graphene films on silica using physical vapour deposition</title><title>Carbon (New York)</title><description>Carbon films and underlying copper template-layers have been deposited energetically in the same filtered cathodic vacuum arc system at 750 °C. The high quality copper template-layers were supported on either silicon or silica and were subsequently sacrificially etched. On silicon, copper silicide formed during the copper deposition process, inhibiting ordered growth in the carbon film. On silica, large areas of multi-layer graphene (up to ∼10 layers) oriented parallel to the substrate were synthesised and these remained intact after the sacrificial etching process. The ability to produce both copper and multilayer graphene layers in one system enables simplified fabrication of this material.
[Display omitted]</description><subject>Arc deposition</subject><subject>Carbon</subject><subject>Chemical vapor deposition</subject><subject>Copper</subject><subject>Energetic deposition</subject><subject>Etching</subject><subject>Filter cathodic vacuum arc</subject><subject>Graphene</subject><subject>Graphitic carbon</subject><subject>Intermetallic compounds</subject><subject>Physical vapor deposition</subject><subject>Silicides</subject><subject>Silicon dioxide</subject><subject>Substrates</subject><issn>0008-6223</issn><issn>1873-3891</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp9UMtqwzAQFKWFpmn_oAdBz3ZXfsqXQgl9QaDQx1nIeiQyjuRKdsB_XwX33NMy7MzsziB0SyAlQKr7LhXct86mGZA6BZoCKc7QitA6T3LakHO0AgCaVFmWX6KrELoIC0qKFfr4nO24V8EE7DQ-TP1okp7PyuOd58NeWYW16Q9xa3EwvREcT8HYHR72c4iox0c-uMljqQYXzGicvUYXmvdB3fzNNfp-fvravCbb95e3zeM2ETmFMVGNbjNeSs11yxtBZEV4rSQIELxoKQXd0rKEquGkbUXeRL6upMyzDESpS5qv0d3iO3j3M6kwsi4-YuNJRpoYtSIZVJFVLCzhXQheaTZ4c-B-ZgTYqT3WsaU9dmqPAWWxvSh7WGQqJjga5VkQRlmhpPFKjEw687_BLxZKfG8</recordid><startdate>201710</startdate><enddate>201710</enddate><creator>Oldfield, Daniel T.</creator><creator>Huynh, Chi P.</creator><creator>Hawkins, Stephen C.</creator><creator>Partridge, James G.</creator><creator>McCulloch, Dougal G.</creator><general>Elsevier Ltd</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0001-8296-0707</orcidid></search><sort><creationdate>201710</creationdate><title>Synthesis of multi-layer graphene films on silica using physical vapour deposition</title><author>Oldfield, Daniel T. ; Huynh, Chi P. ; Hawkins, Stephen C. ; Partridge, James G. ; McCulloch, Dougal G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c380t-e9fb2a5dfafba9c1d61a7ed0c0ca4b880fb855069a1bbc39e9ff6dd3220c5f583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Arc deposition</topic><topic>Carbon</topic><topic>Chemical vapor deposition</topic><topic>Copper</topic><topic>Energetic deposition</topic><topic>Etching</topic><topic>Filter cathodic vacuum arc</topic><topic>Graphene</topic><topic>Graphitic carbon</topic><topic>Intermetallic compounds</topic><topic>Physical vapor deposition</topic><topic>Silicides</topic><topic>Silicon dioxide</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Oldfield, Daniel T.</creatorcontrib><creatorcontrib>Huynh, Chi P.</creatorcontrib><creatorcontrib>Hawkins, Stephen C.</creatorcontrib><creatorcontrib>Partridge, James G.</creatorcontrib><creatorcontrib>McCulloch, Dougal G.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Carbon (New York)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Oldfield, Daniel T.</au><au>Huynh, Chi P.</au><au>Hawkins, Stephen C.</au><au>Partridge, James G.</au><au>McCulloch, Dougal G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis of multi-layer graphene films on silica using physical vapour deposition</atitle><jtitle>Carbon (New York)</jtitle><date>2017-10</date><risdate>2017</risdate><volume>123</volume><spage>683</spage><epage>687</epage><pages>683-687</pages><issn>0008-6223</issn><eissn>1873-3891</eissn><abstract>Carbon films and underlying copper template-layers have been deposited energetically in the same filtered cathodic vacuum arc system at 750 °C. The high quality copper template-layers were supported on either silicon or silica and were subsequently sacrificially etched. On silicon, copper silicide formed during the copper deposition process, inhibiting ordered growth in the carbon film. On silica, large areas of multi-layer graphene (up to ∼10 layers) oriented parallel to the substrate were synthesised and these remained intact after the sacrificial etching process. The ability to produce both copper and multilayer graphene layers in one system enables simplified fabrication of this material.
[Display omitted]</abstract><cop>New York</cop><pub>Elsevier Ltd</pub><doi>10.1016/j.carbon.2017.08.014</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-8296-0707</orcidid><oa>free_for_read</oa></addata></record> |
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| language | eng |
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| source | Elsevier ScienceDirect Journals Complete |
| subjects | Arc deposition Carbon Chemical vapor deposition Copper Energetic deposition Etching Filter cathodic vacuum arc Graphene Graphitic carbon Intermetallic compounds Physical vapor deposition Silicides Silicon dioxide Substrates |
| title | Synthesis of multi-layer graphene films on silica using physical vapour deposition |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T06%3A55%3A40IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Synthesis%20of%20multi-layer%20graphene%20films%20on%20silica%20using%20physical%20vapour%20deposition&rft.jtitle=Carbon%20(New%20York)&rft.au=Oldfield,%20Daniel%20T.&rft.date=2017-10&rft.volume=123&rft.spage=683&rft.epage=687&rft.pages=683-687&rft.issn=0008-6223&rft.eissn=1873-3891&rft_id=info:doi/10.1016/j.carbon.2017.08.014&rft_dat=%3Cproquest_cross%3E1962261206%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1962261206&rft_id=info:pmid/&rft_els_id=S000862231730800X&rfr_iscdi=true |