Synthesis of multi-layer graphene films on silica using physical vapour deposition

Carbon films and underlying copper template-layers have been deposited energetically in the same filtered cathodic vacuum arc system at 750 °C. The high quality copper template-layers were supported on either silicon or silica and were subsequently sacrificially etched. On silicon, copper silicide formed during the copper deposition process, inhibiting ordered growth in the carbon film. On silica, large areas of multi-layer graphene (up to ∼10 layers) oriented parallel to the substrate were synthesised and these remained intact after the sacrificial etching process. The ability to produce both copper and multilayer graphene layers in one system enables simplified fabrication of this material. [Display omitted]