Poly‐Trimethoxyphenylsilane as Carrier Film for Residual‐Free CVD Graphene Transfer

We synthesized poly‐trimethoxyphenylsilane (PTMS) and applied it as the carrier film to CVD graphene transfer process for the first time. Since the PTMS particles are not fully crosslinked due to the presence of bulky groups, they do not have crystallinity in the long‐range order on the graphene surface and are easily removed by solvent such as toluene. Raman, AFM, and X‐ray photoemission (especially, Si 2p signal) analysis confirmed that the surface of the transferred graphene was clean without PTMS impurities. Poly‐trimethoxyphenylsilane (PTMS) film is synthesized and applied as the carrier film to CVD graphene transfer process for the first time. Since the PTMS particles are not fully crosslinked due to the presence of bulky groups, they do not have crystallinity in the long‐range order on the graphene surface and are easily removed by solvent such as toluene.