LEDs: High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer (Adv. Funct. Mater. 42/2017)

A Cu‐doped, NiO‐based quantum dot light‐emitting diode (QLED) reported by Xuyong Yang and co‐workers in article number 1704278 exhibits a significant operating lifetime enhancement compared with organic PEDOT:PSS‐based QLEDs. Relying on an inorganic hole transport layer, the device's quantum do...

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Veröffentlicht in:	Advanced functional materials 2017-11, Vol.27 (42), p.n/a
Hauptverfasser:	Cao, Fan, Wang, Haoran, Shen, Piaoyang, Li, Xiaomin, Zheng, Yanqiong, Shang, Yuequn, Zhang, Jianhua, Ning, Zhijun, Yang, Xuyong
Format:	Artikel
Sprache:	eng
Schlagworte:	Copper Diodes electroluminescence Light emitting diodes Materials science metal doping nickel oxide Nickel oxides Organic light emitting diodes quantum dot LEDs Quantum dots
Online-Zugang:	Volltext
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Zusammenfassung:	A Cu‐doped, NiO‐based quantum dot light‐emitting diode (QLED) reported by Xuyong Yang and co‐workers in article number 1704278 exhibits a significant operating lifetime enhancement compared with organic PEDOT:PSS‐based QLEDs. Relying on an inorganic hole transport layer, the device's quantum dots retain their brightness for an extended time period. This is in contrast to light from a PEDOT:PSS‐based QLED shown in the upper‐left corner of the image.
ISSN:	1616-301X 1616-3028
DOI:	10.1002/adfm.201770253