Single‐Electron Transistors: Bottom‐Up Single‐Electron Transistors (Adv. Mater. 42/2017)

In article number 1702920, Ksenia S. Makarenko, Zhihua Liu, Wilfred G. van der Wiel, and co‐workers present single‐electron transistors (SETs) that are fabricated by a novel bottomup approach. The SETs are based on the self‐assembly of a single Au nanoparticle between two Au nanorods prior to deposition on a substrate. Individual assemblies are contacted to source and drain contacts and electrostatically tuned by a back‐gate electrode, and exhibit high‐quality single‐electron transport characteristics.