Plasma-assisted reactive high-rate vapor deposition of yttria-stabilized zirconia using electron beam evaporation and spotless vacuum arc

Some applications in energy technology will require large-area and dense coatings of yttria-stabilized zirconia (YSZ) while high coating rate is demanded for economic reasons. A combination process of co-evaporation of yttrium and zirconium by EB-PVD from a dual crucible, reactive processing procedure of introducing oxygen, and a spotless arc burning between zirconium as cathode and yttrium as anode were investigated experimentally. The YSZ layers were deposited at relatively high static coating rates (20 to 80nm s−1) in comparison to other PVD processes. The cubic crystal structure that was identified by means of XRD corresponds to the YSZ phase with the highest ionic conductivity and is therefore especially well-suited for use as a solid-state electrolyte. Pores were evidenced in the microstructure of the layers deposited at a coating rate of >50nm s−1. Nevertheless, very dense YSZ layers could be obtained at a coating rate of 30nm s−1 and a spotless arc current of 300A. Specific leakage rates of YSZ layers on porous Ni/NiO-YSZ anode substrates measured using air are in the region of 1Pams−1. The investigations have shown that the intense plasma created with a spotless arc has a considerable influence on growth and microstructure of YSZ layers, even at high coating rates. •YSZ coatings of cubic crystal structure were deposited at a high deposition rate of 20 to 80nm s−1.•The reactive SAD process combines EB high-rate evaporation, spotless arc and oxygen supply.•The spotless arc burns between an evaporating zirconium cathode and an evaporating yttrium anode.•YSZ layers on porous Ni/NiO-YSZ anode substrates have air leakage rates of about 1Pams−1.