Spin disorder effect in anomalous Hall effect in MnGa

•Experimental and theoretical analysis of the anomalous Hall effect in MnGa thin films.•DFT calculations were performed to determine the intrinsic Berry curvature.•Intrinsic Berry curvature results in an anomalous Hall conductivity of 127(Ωcm)−1.•Side-jump contribution can be enhanced by the thermal activation mechanisms. We report on resistivity and Hall effect in MnGa thin films grown by molecular beam epitaxy on GaAs substrates. Highly (111)-textured MnGa film with L10 structure exhibits hard magnetic properties with coercivities as high as 20kOe and spin disorder mechanisms contributing to the Hall conductivity at room temperature. Density functional theory calculations were performed to determine the intrinsic Berry curvature in the momentum space with chiral spin structure that results in an anomalous Hall conductivity of 127(Ωcm)−1 comparable to that measured at low temperature. In addition to residual and side-jump contributions, which are enhanced by thermal activation, both anomalous Hall conductivity and Hall angle increase between 100K and room temperature. The present results reinforce the potential of Mn-Ga system for developing Hall effect-based spintronic devices.