A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance
The work focuses on optimizing the device parameters of a Si‐based dual‐material double‐gate tunnel field‐effect transistor for maximizing its efficiency. The efficiency is measured in terms of drain current, subthreshold swing, ION/IOFF ratio, and electron concentration in Si body. A numerical mode...
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| Veröffentlicht in: | International journal of numerical modelling 2017-11, Vol.30 (6), p.n/a |
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| creator | Noor, Samantha Lubaba Safa, Samia Khan, Md. Ziaur Rahman |
| description | The work focuses on optimizing the device parameters of a Si‐based dual‐material double‐gate tunnel field‐effect transistor for maximizing its efficiency. The efficiency is measured in terms of drain current, subthreshold swing, ION/IOFF ratio, and electron concentration in Si body. A numerical model of dual‐material double‐gate tunnel field‐effect transistor is developed using Silvaco, Atlas. Simulations are performed in Technology Computer Aided Design (TCAD) using Kane's band‐to‐band tunneling model. Based on the simulation results, optimum values of gate workfunctions, doping levels in different regions, ratio of gate lengths, and Si body thickness are suggested for the device. The proposed optimized device shows subthreshold swing of 15 − 41mV/dec, on current of 1.4 × 10 − 4A/μm and ION/IOFF ratio on the order of 1012. |
| doi_str_mv | 10.1002/jnm.2220 |
| format | Article |
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Ziaur Rahman</creator><creatorcontrib>Noor, Samantha Lubaba ; Safa, Samia ; Khan, Md. Ziaur Rahman</creatorcontrib><description>The work focuses on optimizing the device parameters of a Si‐based dual‐material double‐gate tunnel field‐effect transistor for maximizing its efficiency. The efficiency is measured in terms of drain current, subthreshold swing, ION/IOFF ratio, and electron concentration in Si body. A numerical model of dual‐material double‐gate tunnel field‐effect transistor is developed using Silvaco, Atlas. Simulations are performed in Technology Computer Aided Design (TCAD) using Kane's band‐to‐band tunneling model. Based on the simulation results, optimum values of gate workfunctions, doping levels in different regions, ratio of gate lengths, and Si body thickness are suggested for the device. The proposed optimized device shows subthreshold swing of 15 − 41mV/dec, on current of 1.4 × 10 − 4A/μm and ION/IOFF ratio on the order of 1012.</description><identifier>ISSN: 0894-3370</identifier><identifier>EISSN: 1099-1204</identifier><identifier>DOI: 10.1002/jnm.2220</identifier><language>eng</language><publisher>Chichester, UK: John Wiley & Sons, Ltd</publisher><subject>CAD ; Computer aided design ; Computer simulation ; dual‐material double‐gate tunnel FET ; Field effect transistors ; Mathematical models ; Optimization ; Silicon ; subthreshold swing ; TCAD simulation ; Transistors ; tunneling current</subject><ispartof>International journal of numerical modelling, 2017-11, Vol.30 (6), p.n/a</ispartof><rights>Copyright © 2017 John Wiley & Sons, Ltd.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2930-22b676c3a8b1c624545b46b933962359138df59319f34b6af1512838f72334853</citedby><cites>FETCH-LOGICAL-c2930-22b676c3a8b1c624545b46b933962359138df59319f34b6af1512838f72334853</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fjnm.2220$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fjnm.2220$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,777,781,1412,27905,27906,45555,45556</link.rule.ids></links><search><creatorcontrib>Noor, Samantha Lubaba</creatorcontrib><creatorcontrib>Safa, Samia</creatorcontrib><creatorcontrib>Khan, Md. Ziaur Rahman</creatorcontrib><title>A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance</title><title>International journal of numerical modelling</title><description>The work focuses on optimizing the device parameters of a Si‐based dual‐material double‐gate tunnel field‐effect transistor for maximizing its efficiency. The efficiency is measured in terms of drain current, subthreshold swing, ION/IOFF ratio, and electron concentration in Si body. A numerical model of dual‐material double‐gate tunnel field‐effect transistor is developed using Silvaco, Atlas. Simulations are performed in Technology Computer Aided Design (TCAD) using Kane's band‐to‐band tunneling model. Based on the simulation results, optimum values of gate workfunctions, doping levels in different regions, ratio of gate lengths, and Si body thickness are suggested for the device. The proposed optimized device shows subthreshold swing of 15 − 41mV/dec, on current of 1.4 × 10 − 4A/μm and ION/IOFF ratio on the order of 1012.</description><subject>CAD</subject><subject>Computer aided design</subject><subject>Computer simulation</subject><subject>dual‐material double‐gate tunnel FET</subject><subject>Field effect transistors</subject><subject>Mathematical models</subject><subject>Optimization</subject><subject>Silicon</subject><subject>subthreshold swing</subject><subject>TCAD simulation</subject><subject>Transistors</subject><subject>tunneling current</subject><issn>0894-3370</issn><issn>1099-1204</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kMtKAzEYhYMoWKvgIwTcuJma63SyLMUrVTe6DpmZRFMzk5pkKHXlI_iMPompdevq53x8nB8OAKcYTTBC5GLZdxNCCNoDI4yEKDBBbB-MUCVYQekUHYKjGJcIIYo5GYG3GYzW2cb3359ftYq6he2gXA6dSjpY5WDrh9rpTF4ygWnoe-2gsdq1mWljdJNgCqqPNiYf4NqmV-hXyXb2I7etdDA-dKpv9DE4MMpFffJ3x-D56vJpflMsHq9v57NF0RBBUUFIXU7Lhqqqxk1JGGe8ZmUtKBUloVxgWrWGC4qFoawulcEck4pWZkooZRWnY3C2610F_z7omOTSD6HPLyUWHDNWEl5l63xnNcHHGLSRq2A7FTYSI7mdUuYp5XbKrBY7dW2d3vzrybuH-1__B_iaeGA</recordid><startdate>201711</startdate><enddate>201711</enddate><creator>Noor, Samantha Lubaba</creator><creator>Safa, Samia</creator><creator>Khan, Md. 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Based on the simulation results, optimum values of gate workfunctions, doping levels in different regions, ratio of gate lengths, and Si body thickness are suggested for the device. The proposed optimized device shows subthreshold swing of 15 − 41mV/dec, on current of 1.4 × 10 − 4A/μm and ION/IOFF ratio on the order of 1012.</abstract><cop>Chichester, UK</cop><pub>John Wiley & Sons, Ltd</pub><doi>10.1002/jnm.2220</doi><tpages>1</tpages></addata></record> |
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| identifier | ISSN: 0894-3370 |
| ispartof | International journal of numerical modelling, 2017-11, Vol.30 (6), p.n/a |
| issn | 0894-3370 1099-1204 |
| language | eng |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | CAD Computer aided design Computer simulation dual‐material double‐gate tunnel FET Field effect transistors Mathematical models Optimization Silicon subthreshold swing TCAD simulation Transistors tunneling current |
| title | A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance |
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