A silicon‐based dual‐material double‐gate tunnel field‐effect transistor with optimized performance

The work focuses on optimizing the device parameters of a Si‐based dual‐material double‐gate tunnel field‐effect transistor for maximizing its efficiency. The efficiency is measured in terms of drain current, subthreshold swing, ION/IOFF ratio, and electron concentration in Si body. A numerical model of dual‐material double‐gate tunnel field‐effect transistor is developed using Silvaco, Atlas. Simulations are performed in Technology Computer Aided Design (TCAD) using Kane's band‐to‐band tunneling model. Based on the simulation results, optimum values of gate workfunctions, doping levels in different regions, ratio of gate lengths, and Si body thickness are suggested for the device. The proposed optimized device shows subthreshold swing of 15 − 41mV/dec, on current of 1.4 × 10 − 4A/μm and ION/IOFF ratio on the order of 1012.