Charge transport studies on Si nanopillars for photodetectors fabricated using vapor phase metal-assisted chemical etching

Si nanopillars (SiNPLs) were fabricated using a novel vapor phase metal-assisted chemical etching (V-Mace) and nanosphere lithography. The temperature dependent current–voltage ( I–V ) characteristics have been studied over a broad temperature range 170–360 K. The SiNPLs show a Schottky diode-like b...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2017-11, Vol.123 (11), p.1-10, Article 681
Hauptverfasser:	Karadan, Prajith, Parida, Santanu, Kumar, Arvind, Anappara, Aji A., Dhara, Sandip, Barshilia, Harish C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Characterization and Evaluation of Materials Charge transport Chemical etching Condensed Matter Physics Current voltage characteristics Dark current Diodes Electrical properties Electromagnetic absorption Illumination Light Machines Manufacturing Materials science Nanospheres Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Reflectance Resistance factors Response time Sensitivity Surfaces and Interfaces Thin Films Vanadium White light
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Si nanopillars (SiNPLs) were fabricated using a novel vapor phase metal-assisted chemical etching (V-Mace) and nanosphere lithography. The temperature dependent current–voltage ( I–V ) characteristics have been studied over a broad temperature range 170–360 K. The SiNPLs show a Schottky diode-like behavior at a temperature below 300 K and the rectification (about two orders of magnitude) is more prominent at temperature
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s00339-017-1287-5