Enhanced curie temperature and high heat resistivity of PMnN-PZT monocrystalline thin film on Si

•Fabricate c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 monocrystalline film on Si.•It exhibits large piezoelectric constant e31,f of ∼14C/m2 and high Tc of 500–600°C.•The piezoelectricity is maintained even after once heating over the Tc value.•This PMnN-PZT/Si transducer has a great potential for...

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Veröffentlicht in:	Sensors and actuators. A. Physical. 2016-11, Vol.251, p.100-107
Hauptverfasser:	Yoshida, Shinya, Hanzawa, Hiroaki, Wasa, Kiyotaka, Tanaka, Shuji
Format:	Artikel
Sprache:	eng
Schlagworte:	Buffer layers Ceramics Crystals Curie temperature Dielectric properties Electrical resistivity Ferroelectric materials Heat resistance Heating Lead zirconate titanate (PZT) Lead zirconate titanates MEMS (Micro-electro mechanical systems) Microelectromechanical systems Piezoelectricity PZT-based monocrystalline thin film on Si Silicon Silicon substrates Strong interactions (field theory)
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