Enhanced curie temperature and high heat resistivity of PMnN-PZT monocrystalline thin film on Si

•Fabricate c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 monocrystalline film on Si.•It exhibits large piezoelectric constant e31,f of ∼14C/m2 and high Tc of 500–600°C.•The piezoelectricity is maintained even after once heating over the Tc value.•This PMnN-PZT/Si transducer has a great potential for heatable piezo MEMS actuator. In this study, a c-axis-oriented PMnN-PZT monocrystalline thin film was sputter-deposited on a Si substrate covered with buffer layers. Curie temperature, Tc, was estimated by investigating the temperature variation of the piezoelectric, dielectric, and ferroelectric properties and the crystalline lattice. Estimated Tc is at least 150°C higher than those of the bulk ceramics. The enhanced Tc is possibly caused by a strong interaction between the thin film and the Si substrate. The piezoelectric and ferroelectric properties were measured before and after heating to >600°C, and no significant differences were observed, demonstrating excellent heat resistivity. The results of this study give a better material option for high-temperature piezoelectric MEMS.