Modification of the optoelectronic properties of Cu2CdSnS4 through low-temperature annealing

In this study the experimental evidence of the existence of Cu-Cd disordering in Cu2CdSnS4 is presented. The influence of low-temperature annealing from 100 °C to 400 °C to the optical and structural properties of Cu2CdSnS4 polycrystalline powder was studied. Raman scattering and temperature dependent photoluminescence analysis were used to show that the degree of disordering can be reduced with the low-temperature annealing below the critical temperature. According to our study the critical temperature lies in the range from 200 °C to 250 °C. It was found that, the change in the degree of disordering in Cu2CdSnS4 is accompanied with the change in the radiative recombination channel related to different type of defect clusters. •X-ray diffraction and Raman analysis of Cu2CdSnS4 were performed.•Temperature dependent photoluminescence analysis of Cu2CdSnS4 was measured.•Experimentally shown the existence of Cu-Cd disordering in Cu2CdSnS4.•Radiative recombination mechanisms in Cu2CdSnS4 were identified.