Carbon layer application in phase change memory to reduce power consumption and atomic migration

•Carbon thin film has been used as buffer layer in PCM.•Lower power consumption and high operation speed have been achieved.•A less favorable viscosity for atoms migration has be achieved during RESET. Phase change memory (PCM) cells with carbon buffer layer have been fabricated. Carbon layer reduce...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials letters 2017-11, Vol.206, p.52-55
Hauptverfasser: Ren, Kun, Cheng, Yan, Chen, Xin, Ding, Keyuan, Lv, Shilong, Yin, Weijun, Guo, Xiaohui, Ji, Zhenguo, Song, Zhitang
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:•Carbon thin film has been used as buffer layer in PCM.•Lower power consumption and high operation speed have been achieved.•A less favorable viscosity for atoms migration has be achieved during RESET. Phase change memory (PCM) cells with carbon buffer layer have been fabricated. Carbon layer reduced the heat dissipation through upper electrode, increasing the energy efficiency of PCM, reducing the power consumption. The element distribution in PCM cell after 3×105 cycles proved that the carbon layer has successfully prevented atoms diffusion. After carbon layer being applied, the local high temperature during RESET in phase change material has been lowered. Hence, the higher viscosity at lower temperature has reduced atomic migration, beneficial to a good endurance.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2017.06.072