Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

[Display omitted] •Both n and p-type semiconductors are solution processed.•Temperature compatibility with flexible substrates such as polyimide.•Compatibility of p-type film (CuO) on n-type film (IZO).•Diode with rectification ratio of 104 and operating voltage

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Bibliographische Detailangaben
Veröffentlicht in:	Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2017-04, Vol.218, p.64-73
Hauptverfasser:	Choudhary, Ishan, Deepak
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Band alignment Copper oxides CuO Diodes Electronics Gallium Heterojunction diode IGZO Indium Indium gallium zinc oxide Inks IZO Photoelectron spectroscopy Semiconductor devices Sol-gel processes Solution processing Substrates Thin film transistors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	[Display omitted] •Both n and p-type semiconductors are solution processed.•Temperature compatibility with flexible substrates such as polyimide.•Compatibility of p-type film (CuO) on n-type film (IZO).•Diode with rectification ratio of 104 and operating voltage
ISSN:	0921-5107 1873-4944
DOI:	10.1016/j.mseb.2017.02.003