Effect of deposition technique on chemical bonding and amount of porogen residues in organosilicate glass

Impact of deposition technique on the chemical bonding in low-κ organosilicate glass (OSG) films and on porogen residues was studied using near edge X-ray absorption fine structure (NEXAFS) and internal photoemission (IPE) spectroscopy. The carried analysis reveals that self-assembly technology (SAT) allows one to obtain OSG-films without carbon residues, i.e. with “a clean bandgap”. Conventional PECVD film contains appreciable amount of carbon clusters, which account for gap states responsible for charge trapping and leakage current. [Display omitted] •Si-O matrix of PECVD and SAT films is similar but their electrical properties differ.•Large amount of porogen residues present in the structure of PECVD films.•It is porogen residues, which are the reason of gap states leading to leakage current.•SAT method allows one to obtain OSG-films without carbon clusters with clean bandgap.