Design and fabrication of quaternary Co^1-x-y^Zn^sub x^Cd^sub y^S thin film photoelectrochemical (PEC) cell

Quaternary semiconductor thin films are an emerging material for the development of photoelectrochemical (PEC) cells. Here, we are presenting the photoelectrochemical properties of Co1-x-yZn xCdyS thin films. Chemical synthesis of quaternary Co1-x-yZn xCdyS thin films has been reported previously. As-deposited thin films were studied for morphological features using atomic force microscopy (AFM). The photoelectrochemical (PEC) properties of chemically deposited Co1-x-yZn xCdyS thin films have been studied. PEC cell of configuration Co1-x-yZn xCdyS/0.5 M KCl/C was fabricated to study the various PEC parameters in dark and under illumination. The maximum efficiency and fill factor were found to be 1.06% and 0.39 respectively for composition x=y=0.15.