Growth of ZnMgSeTe nearly lattice-matched to ZnTe and p-type doping by low-pressure MOVPE

Zn1-xMgxSeyTe1-y layers have been grown on (100) ZnTe substrates by low-pressure metalorganic vapor phase epitaxy using dimethylzinc, bis-methylcyclopentadienyl magnesium ((MeCp)2Mg), diethylselenide and diethyltelluride as source materials. The Mg mole fraction of Zn1-xMgxSeyTe1-y layer can be controlled successfully by varying (MeCp)2Mg transport rate. P-type doping of this material has been tried using tris-dimethylaminophosphorus as a dopant source. The influence of annealing temperature or dopant transport rate upon the electrical property has been investigated. All the layers show p-type conduction even without annealing. Through this study, a maximum carrier concentration of 2.5×1018cm−3 is obtained. •ZnMgSeTe layers were grown by low-pressure metalorganic vapor phase epitaxy.•P-type layer with a high carrier concentration of 2.5×1018cm−3 was achieved.•Post-annealing is very effective for enhancement of the carrier concentration.