Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE
Photoluminescence (PL) spectra and electrical properties of both as-grown and annealed phosphorus-doped ZnTe layers grown by low-pressure metalorganic vapor phase epitaxy have been clarified as a function of reactor pressure or dopant transport rate. The carrier concentration of as-grown layer incre...
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| Veröffentlicht in: | Journal of crystal growth 2017-06, Vol.468, p.666-670 |
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| container_title | Journal of crystal growth |
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| creator | Nishio, M. Saito, K. Nakatsuru, Y. Shono, T. Matsuo, Y. Tomota, A. Tanaka, T. Guo, Q.X. |
| description | Photoluminescence (PL) spectra and electrical properties of both as-grown and annealed phosphorus-doped ZnTe layers grown by low-pressure metalorganic vapor phase epitaxy have been clarified as a function of reactor pressure or dopant transport rate. The carrier concentration of as-grown layer increases with decreasing reactor pressure or increasing dopant transport rate, in good agreement with PL behavior. Similar tendency is also found for annealed layer. Annealing treatment induces the enhancement of the carrier concentration, independent of reactor pressure or dopant transport rate. Through this study, a high carrier concentration near 1019cm−3 has been attainable.
•P-doped ZnTe layers were grown by low-pressure metalorganic vapor phase epitaxy.•The layer quality was studied by changing reactor pressure or dopant transport rate.•A high carrier concentration near 1019cm−3 was obtained after annealing. |
| doi_str_mv | 10.1016/j.jcrysgro.2017.01.030 |
| format | Article |
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•P-doped ZnTe layers were grown by low-pressure metalorganic vapor phase epitaxy.•The layer quality was studied by changing reactor pressure or dopant transport rate.•A high carrier concentration near 1019cm−3 was obtained after annealing.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2017.01.030</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Doping ; A3. Low press. metalorganic vapor phase epitaxy ; Annealing ; B1. Zinc compounds ; B2. Semiconducting II-VI materials ; Carrier density ; Chemical compounds ; Dopants ; Electric properties ; Electrical properties ; Epitaxial growth ; Low pressure ; Luminescence ; Metalorganic chemical vapor deposition ; Photoluminescence ; Pressure ; Transport rate ; Zinc tellurides</subject><ispartof>Journal of crystal growth, 2017-06, Vol.468, p.666-670</ispartof><rights>2017 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jun 15, 2017</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c388t-712d069da51af07e58e6e919f0a7c5852b781a4b549e05fe05e03f26a10296403</citedby><cites>FETCH-LOGICAL-c388t-712d069da51af07e58e6e919f0a7c5852b781a4b549e05fe05e03f26a10296403</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024817300350$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3536,27903,27904,65309</link.rule.ids></links><search><creatorcontrib>Nishio, M.</creatorcontrib><creatorcontrib>Saito, K.</creatorcontrib><creatorcontrib>Nakatsuru, Y.</creatorcontrib><creatorcontrib>Shono, T.</creatorcontrib><creatorcontrib>Matsuo, Y.</creatorcontrib><creatorcontrib>Tomota, A.</creatorcontrib><creatorcontrib>Tanaka, T.</creatorcontrib><creatorcontrib>Guo, Q.X.</creatorcontrib><title>Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE</title><title>Journal of crystal growth</title><description>Photoluminescence (PL) spectra and electrical properties of both as-grown and annealed phosphorus-doped ZnTe layers grown by low-pressure metalorganic vapor phase epitaxy have been clarified as a function of reactor pressure or dopant transport rate. The carrier concentration of as-grown layer increases with decreasing reactor pressure or increasing dopant transport rate, in good agreement with PL behavior. Similar tendency is also found for annealed layer. Annealing treatment induces the enhancement of the carrier concentration, independent of reactor pressure or dopant transport rate. Through this study, a high carrier concentration near 1019cm−3 has been attainable.
•P-doped ZnTe layers were grown by low-pressure metalorganic vapor phase epitaxy.•The layer quality was studied by changing reactor pressure or dopant transport rate.•A high carrier concentration near 1019cm−3 was obtained after annealing.</description><subject>A1. Doping</subject><subject>A3. Low press. metalorganic vapor phase epitaxy</subject><subject>Annealing</subject><subject>B1. Zinc compounds</subject><subject>B2. Semiconducting II-VI materials</subject><subject>Carrier density</subject><subject>Chemical compounds</subject><subject>Dopants</subject><subject>Electric properties</subject><subject>Electrical properties</subject><subject>Epitaxial growth</subject><subject>Low pressure</subject><subject>Luminescence</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Photoluminescence</subject><subject>Pressure</subject><subject>Transport rate</subject><subject>Zinc tellurides</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFkE1Lw0AQhhdRsFb_gix4TpzJ5-amFL-g0h6qBw8u281EE9Js3U0s-fduqZ49zAwD7zsfD2OXCCECZtdN2Gg7ug9rwggwDwFDiOGITVDkcZACRMds4nMUQJSIU3bmXAPgnQgT9r78NL1ph03dkdPUaeKqKzm1pHtba9XyrTVbsn1NjpuKL4PStyV_61bEWzWSddxv3nV8PfLW7LycnBss8efF6_LunJ1UqnV08Vun7OX-bjV7DOaLh6fZ7TzQsRB9kGNUQlaUKkVVQU6poIwKLCpQuU5FGq1zgSpZp0lBkFY-COIqyhRCVGQJxFN2dZjrr_0ayPWyMYPt_EqJRQJYoMhir8oOKm2Nc5YqubX1RtlRIsg9S9nIP5Zyz1ICSs_SG28ORvI_fNdkpdP1HlZZWw9Klqb-b8QP1viAlA</recordid><startdate>20170615</startdate><enddate>20170615</enddate><creator>Nishio, M.</creator><creator>Saito, K.</creator><creator>Nakatsuru, Y.</creator><creator>Shono, T.</creator><creator>Matsuo, Y.</creator><creator>Tomota, A.</creator><creator>Tanaka, T.</creator><creator>Guo, Q.X.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20170615</creationdate><title>Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE</title><author>Nishio, M. ; Saito, K. ; Nakatsuru, Y. ; Shono, T. ; Matsuo, Y. ; Tomota, A. ; Tanaka, T. ; Guo, Q.X.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c388t-712d069da51af07e58e6e919f0a7c5852b781a4b549e05fe05e03f26a10296403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>A1. Doping</topic><topic>A3. Low press. metalorganic vapor phase epitaxy</topic><topic>Annealing</topic><topic>B1. Zinc compounds</topic><topic>B2. Semiconducting II-VI materials</topic><topic>Carrier density</topic><topic>Chemical compounds</topic><topic>Dopants</topic><topic>Electric properties</topic><topic>Electrical properties</topic><topic>Epitaxial growth</topic><topic>Low pressure</topic><topic>Luminescence</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Photoluminescence</topic><topic>Pressure</topic><topic>Transport rate</topic><topic>Zinc tellurides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nishio, M.</creatorcontrib><creatorcontrib>Saito, K.</creatorcontrib><creatorcontrib>Nakatsuru, Y.</creatorcontrib><creatorcontrib>Shono, T.</creatorcontrib><creatorcontrib>Matsuo, Y.</creatorcontrib><creatorcontrib>Tomota, A.</creatorcontrib><creatorcontrib>Tanaka, T.</creatorcontrib><creatorcontrib>Guo, Q.X.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nishio, M.</au><au>Saito, K.</au><au>Nakatsuru, Y.</au><au>Shono, T.</au><au>Matsuo, Y.</au><au>Tomota, A.</au><au>Tanaka, T.</au><au>Guo, Q.X.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE</atitle><jtitle>Journal of crystal growth</jtitle><date>2017-06-15</date><risdate>2017</risdate><volume>468</volume><spage>666</spage><epage>670</epage><pages>666-670</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>Photoluminescence (PL) spectra and electrical properties of both as-grown and annealed phosphorus-doped ZnTe layers grown by low-pressure metalorganic vapor phase epitaxy have been clarified as a function of reactor pressure or dopant transport rate. The carrier concentration of as-grown layer increases with decreasing reactor pressure or increasing dopant transport rate, in good agreement with PL behavior. Similar tendency is also found for annealed layer. Annealing treatment induces the enhancement of the carrier concentration, independent of reactor pressure or dopant transport rate. Through this study, a high carrier concentration near 1019cm−3 has been attainable.
•P-doped ZnTe layers were grown by low-pressure metalorganic vapor phase epitaxy.•The layer quality was studied by changing reactor pressure or dopant transport rate.•A high carrier concentration near 1019cm−3 was obtained after annealing.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2017.01.030</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of crystal growth, 2017-06, Vol.468, p.666-670 |
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| subjects | A1. Doping A3. Low press. metalorganic vapor phase epitaxy Annealing B1. Zinc compounds B2. Semiconducting II-VI materials Carrier density Chemical compounds Dopants Electric properties Electrical properties Epitaxial growth Low pressure Luminescence Metalorganic chemical vapor deposition Photoluminescence Pressure Transport rate Zinc tellurides |
| title | Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE |
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