Photoluminescence and electrical properties of P-doped ZnTe layers grown by low pressure MOVPE

Photoluminescence (PL) spectra and electrical properties of both as-grown and annealed phosphorus-doped ZnTe layers grown by low-pressure metalorganic vapor phase epitaxy have been clarified as a function of reactor pressure or dopant transport rate. The carrier concentration of as-grown layer increases with decreasing reactor pressure or increasing dopant transport rate, in good agreement with PL behavior. Similar tendency is also found for annealed layer. Annealing treatment induces the enhancement of the carrier concentration, independent of reactor pressure or dopant transport rate. Through this study, a high carrier concentration near 1019cm−3 has been attainable. •P-doped ZnTe layers were grown by low-pressure metalorganic vapor phase epitaxy.•The layer quality was studied by changing reactor pressure or dopant transport rate.•A high carrier concentration near 1019cm−3 was obtained after annealing.