MBE synthesis of (In,Mn)As quantum dots using Mn selective doping
The structural and optical properties of (In,Mn)As obtained by molecular beam epitaxy using Mn selective doping were investigated. Despite relatively high growth temperature, the (In,Mn)As quantum dot structures have a high crystalline quality. The synthesis of multi-layered quantum dot structure, a...
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| Veröffentlicht in: | Journal of crystal growth 2017-06, Vol.468, p.680-682 |
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| container_title | Journal of crystal growth |
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| creator | Bouravleuv, Alexei Sapega, Victor Nevedomskii, Vladimir Khrebtov, Artem Samsonenko, Yuriy Cirlin, George Strocov, Vladimir |
| description | The structural and optical properties of (In,Mn)As obtained by molecular beam epitaxy using Mn selective doping were investigated. Despite relatively high growth temperature, the (In,Mn)As quantum dot structures have a high crystalline quality. The synthesis of multi-layered quantum dot structure, as well as p-i-n structure with embedded (In,Mn)As quantum dot layer was carried out. The results obtained can be of importance for the creation of novel light emitting devices.
•A new technique based on Mn selective doping is proposed for the MBE growth of (In,Mn)As quantum dots.•(In,Mn)As quantum dots grown by MBE at relatively high temperature range can have a high crystalline quality.•Mn-selective doping can be used for the formation of (In,Mn)As quantum dots, which exhibit good magneto-optical properties. |
| doi_str_mv | 10.1016/j.jcrysgro.2016.09.080 |
| format | Article |
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•A new technique based on Mn selective doping is proposed for the MBE growth of (In,Mn)As quantum dots.•(In,Mn)As quantum dots grown by MBE at relatively high temperature range can have a high crystalline quality.•Mn-selective doping can be used for the formation of (In,Mn)As quantum dots, which exhibit good magneto-optical properties.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2016.09.080</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Crystal structure ; A3. Molecular beam epitaxy ; B1. Nanomaterials ; B2. Semiconducting III-V materials ; Chemical synthesis ; Crystals ; Doping ; Epitaxial growth ; Molecular beam epitaxy ; Multilayers ; Optical properties ; Quantum dots ; Semiconductor doping ; Studies</subject><ispartof>Journal of crystal growth, 2017-06, Vol.468, p.680-682</ispartof><rights>2016 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jun 15, 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c406t-6a270afb38b9988fa9c7e5629633d1c2aaf62b1236b181bb29c4ffbdbdd03c5e3</citedby><cites>FETCH-LOGICAL-c406t-6a270afb38b9988fa9c7e5629633d1c2aaf62b1236b181bb29c4ffbdbdd03c5e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2016.09.080$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Bouravleuv, Alexei</creatorcontrib><creatorcontrib>Sapega, Victor</creatorcontrib><creatorcontrib>Nevedomskii, Vladimir</creatorcontrib><creatorcontrib>Khrebtov, Artem</creatorcontrib><creatorcontrib>Samsonenko, Yuriy</creatorcontrib><creatorcontrib>Cirlin, George</creatorcontrib><creatorcontrib>Strocov, Vladimir</creatorcontrib><title>MBE synthesis of (In,Mn)As quantum dots using Mn selective doping</title><title>Journal of crystal growth</title><description>The structural and optical properties of (In,Mn)As obtained by molecular beam epitaxy using Mn selective doping were investigated. Despite relatively high growth temperature, the (In,Mn)As quantum dot structures have a high crystalline quality. The synthesis of multi-layered quantum dot structure, as well as p-i-n structure with embedded (In,Mn)As quantum dot layer was carried out. The results obtained can be of importance for the creation of novel light emitting devices.
•A new technique based on Mn selective doping is proposed for the MBE growth of (In,Mn)As quantum dots.•(In,Mn)As quantum dots grown by MBE at relatively high temperature range can have a high crystalline quality.•Mn-selective doping can be used for the formation of (In,Mn)As quantum dots, which exhibit good magneto-optical properties.</description><subject>A1. Crystal structure</subject><subject>A3. Molecular beam epitaxy</subject><subject>B1. Nanomaterials</subject><subject>B2. Semiconducting III-V materials</subject><subject>Chemical synthesis</subject><subject>Crystals</subject><subject>Doping</subject><subject>Epitaxial growth</subject><subject>Molecular beam epitaxy</subject><subject>Multilayers</subject><subject>Optical properties</subject><subject>Quantum dots</subject><subject>Semiconductor doping</subject><subject>Studies</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNqFUMFKAzEUDKJgrf6CBLwouOtLdpsmN2upWmjxoueQZJO6S5ttk91C_96U6tnLe7xhZh4zCN0SyAkQ9tTkjQmHuAptTtOdg8iBwxkaED4ushEAPUeDNGkGtOSX6CrGBiAxCQzQZPkyw_Hgu28b64hbh-_n_nHpHyYR73rlu36Dq7aLuI-1X-Glx9GurenqvU34NmHX6MKpdbQ3v3uIvl5nn9P3bPHxNp9OFpkpgXUZU3QMyumCayE4d0qYsR0xKlhRVMRQpRyjmtCCacKJ1lSY0jld6aqCwoxsMUR3J99taHe9jZ1s2j749FISUQLhjIlRYrETy4Q2xmCd3IZ6o8JBEpDHumQj_-qSx7okCJnqSsLnk9CmDPvaBhlNbb2xVR1SXlm19X8WP0npdnE</recordid><startdate>20170615</startdate><enddate>20170615</enddate><creator>Bouravleuv, Alexei</creator><creator>Sapega, Victor</creator><creator>Nevedomskii, Vladimir</creator><creator>Khrebtov, Artem</creator><creator>Samsonenko, Yuriy</creator><creator>Cirlin, George</creator><creator>Strocov, Vladimir</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20170615</creationdate><title>MBE synthesis of (In,Mn)As quantum dots using Mn selective doping</title><author>Bouravleuv, Alexei ; Sapega, Victor ; Nevedomskii, Vladimir ; Khrebtov, Artem ; Samsonenko, Yuriy ; Cirlin, George ; Strocov, Vladimir</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c406t-6a270afb38b9988fa9c7e5629633d1c2aaf62b1236b181bb29c4ffbdbdd03c5e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>A1. Crystal structure</topic><topic>A3. Molecular beam epitaxy</topic><topic>B1. Nanomaterials</topic><topic>B2. Semiconducting III-V materials</topic><topic>Chemical synthesis</topic><topic>Crystals</topic><topic>Doping</topic><topic>Epitaxial growth</topic><topic>Molecular beam epitaxy</topic><topic>Multilayers</topic><topic>Optical properties</topic><topic>Quantum dots</topic><topic>Semiconductor doping</topic><topic>Studies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bouravleuv, Alexei</creatorcontrib><creatorcontrib>Sapega, Victor</creatorcontrib><creatorcontrib>Nevedomskii, Vladimir</creatorcontrib><creatorcontrib>Khrebtov, Artem</creatorcontrib><creatorcontrib>Samsonenko, Yuriy</creatorcontrib><creatorcontrib>Cirlin, George</creatorcontrib><creatorcontrib>Strocov, Vladimir</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bouravleuv, Alexei</au><au>Sapega, Victor</au><au>Nevedomskii, Vladimir</au><au>Khrebtov, Artem</au><au>Samsonenko, Yuriy</au><au>Cirlin, George</au><au>Strocov, Vladimir</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MBE synthesis of (In,Mn)As quantum dots using Mn selective doping</atitle><jtitle>Journal of crystal growth</jtitle><date>2017-06-15</date><risdate>2017</risdate><volume>468</volume><spage>680</spage><epage>682</epage><pages>680-682</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>The structural and optical properties of (In,Mn)As obtained by molecular beam epitaxy using Mn selective doping were investigated. Despite relatively high growth temperature, the (In,Mn)As quantum dot structures have a high crystalline quality. The synthesis of multi-layered quantum dot structure, as well as p-i-n structure with embedded (In,Mn)As quantum dot layer was carried out. The results obtained can be of importance for the creation of novel light emitting devices.
•A new technique based on Mn selective doping is proposed for the MBE growth of (In,Mn)As quantum dots.•(In,Mn)As quantum dots grown by MBE at relatively high temperature range can have a high crystalline quality.•Mn-selective doping can be used for the formation of (In,Mn)As quantum dots, which exhibit good magneto-optical properties.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2016.09.080</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of crystal growth, 2017-06, Vol.468, p.680-682 |
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| language | eng |
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| subjects | A1. Crystal structure A3. Molecular beam epitaxy B1. Nanomaterials B2. Semiconducting III-V materials Chemical synthesis Crystals Doping Epitaxial growth Molecular beam epitaxy Multilayers Optical properties Quantum dots Semiconductor doping Studies |
| title | MBE synthesis of (In,Mn)As quantum dots using Mn selective doping |
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