MBE synthesis of (In,Mn)As quantum dots using Mn selective doping

The structural and optical properties of (In,Mn)As obtained by molecular beam epitaxy using Mn selective doping were investigated. Despite relatively high growth temperature, the (In,Mn)As quantum dot structures have a high crystalline quality. The synthesis of multi-layered quantum dot structure, as well as p-i-n structure with embedded (In,Mn)As quantum dot layer was carried out. The results obtained can be of importance for the creation of novel light emitting devices. •A new technique based on Mn selective doping is proposed for the MBE growth of (In,Mn)As quantum dots.•(In,Mn)As quantum dots grown by MBE at relatively high temperature range can have a high crystalline quality.•Mn-selective doping can be used for the formation of (In,Mn)As quantum dots, which exhibit good magneto-optical properties.