X-ray diffraction simulation of GeSn/Ge multi-quantum wells with kinematic approach

We report an investigation on X-ray diffraction simulation of GeSn/Ge Multi-quantum wells (MQWs) with kinematic approach. X-ray diffraction in (004) ω-2θ scan and (224) reciprocal space mapping are performed for characterization of the MQWs. However, simulation of the diffraction process is imperati...

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Veröffentlicht in:Journal of crystal growth 2017-06, Vol.468, p.272-274
Hauptverfasser: Li, Hui, Chang, Chiao, Cheng, Hung-Hsiang
Format: Artikel
Sprache:eng
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Zusammenfassung:We report an investigation on X-ray diffraction simulation of GeSn/Ge Multi-quantum wells (MQWs) with kinematic approach. X-ray diffraction in (004) ω-2θ scan and (224) reciprocal space mapping are performed for characterization of the MQWs. However, simulation of the diffraction process is imperative for further structural analysis of the MQWs. The compressive strain not only affects the calculation of Sn composition in GeSn wells, but also dramatically affects the symmetry of satellite peaks. •Simulation of the X-ray diffraction process is imperative for structural analysis of GeSn/Ge multi-quantum wells.•GeSn wells are found under compressive strain characterized by X-ray diffraction (224) reciprocal space mapping.•The compressive strain affects the calculation of Sn composition in GeSn wells.•The compressive strain dramatically affects the symmetry of satellite peaks.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2016.12.067