TiF3:TiN nanocomposite thin films – a novel transparent conductor system
Metal matrix nanocomposite thin films consisting of TiF3 nanoparticles embedded in TiN matrix were synthesized with the atomic layer deposition (ALD) method. TiF4, Si2H6 (or Si3H8), and NH3‐based process at 350–370 °C led to nanocomposite TiF3:TiN thin films with the embedded TiF3 nanoparticles in t...
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Veröffentlicht in: | Physica status solidi. C 2017-09, Vol.14 (9), p.n/a |
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Sprache: | eng |
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Zusammenfassung: | Metal matrix nanocomposite thin films consisting of TiF3 nanoparticles embedded in TiN matrix were synthesized with the atomic layer deposition (ALD) method. TiF4, Si2H6 (or Si3H8), and NH3‐based process at 350–370 °C led to nanocomposite TiF3:TiN thin films with the embedded TiF3 nanoparticles in the size range of 2–50 nm. The films grown on quartz wafers were conductive and transparent in the visible spectral range. The resistivities of the films could be controlled by the (TiF4 + Si2H6)/NH3 pulsing ratio. Transparency of the films correlated with the resistivity of the films, namely the more transparent the films were, the higher the resistivities. About 4 cm2 area photovoltaic cells with TiF3:TiN/SiO2 (1.5–20 nm)/p‐Si (1–85 Ωcm)/SiO2 (1.5–20 nm)/TiN structures resulted in 0.10–0.45 V open circuit voltage and 1–2.5 μA current flow into a 120 Ω load resistor under halogen lamp (Osram 50 W, 240 V bulb, 2800 K) illumination. The mechanism of the photovoltaic effect in these structures is not known in detail, but it is suggested that the TiF3:TiN nanocomposite functions as a partly transparent conducting electrode on the silicon wafer forming a MIS‐type silicon photovoltaic cell. This new material and its derivatives may have multiple applications in current and future photonic devices.
TEM images of the TiF3:TiN nanocomposite thin film. The plan view image is a dark field image showing the TiF3 crystallites as bright spots, whereas the cross sectional image is a bright field image showing the TiF3 crystallites as dark spots. |
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ISSN: | 1862-6351 1610-1642 |
DOI: | 10.1002/pssc.201700006 |