Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology

Investigation of the features of integrating nonvolatile FRAM elements with CMOS technology

The results of the studies of the features of integrating the elements of nonvolatile ferroelectric random access memory (FRAM) with CMOS technology are presented. The possibility and prospects of using their nanosized layers in the elements of nonvolatile FRAM are demonstrated.

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Veröffentlicht in:Russian microelectronics 2017-09, Vol.46 (5), p.353-358
Hauptverfasser: Orlov, O. M., Voronov, D. D., Izmailov, R. A., Krasnikov, G. Ya
Format: Artikel
Sprache:eng
Schlagworte:
CMOS
Digital cameras
Electrical Engineering
Engineering
Ferroelectric materials
Ferroelectricity
Random access memory
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Zusammenfassung:The results of the studies of the features of integrating the elements of nonvolatile ferroelectric random access memory (FRAM) with CMOS technology are presented. The possibility and prospects of using their nanosized layers in the elements of nonvolatile FRAM are demonstrated.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739717050067