Pine shaped InN nanostructure growth via vapour transport method by own shadowing and infrared detection

We have demonstrated the synthesis of Indium Nitride (InN) Nanopines (NПs) array on Si substrate using Oblique Angle Deposition (OAD) technique. The deposited InN NПs have an average height of ∼2 μm. The grown InN NПs are hexagonal in nature and have prominent diffraction peak along orientation. The...

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Veröffentlicht in:	Journal of alloys and compounds 2017-10, Vol.722, p.872-877
Hauptverfasser:	Dwivedi, Shyam Murli Manohar Dhar, Chakrabartty, Shubhro, Ghadi, Hemant, Murkute, Punam, Chavan, Vinayak, Chakrabarti, Subhananda, Bhunia, Satyaban, Mondal, Aniruddha
Format:	Artikel
Sprache:	eng
Schlagworte:	Absorption spectroscopy Band gap Carrier density Indium nitride Infrared detector InN Nanopines (NПs) Oblique angle deposition (OAD) technique Operating temperature Pine Silicon substrates Studies Substrates Temperature X ray photoelectron spectroscopy
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