Photoelectrochemical and opto-electronic properties tuning of ZnO films: Effect of Cu doping content

In this work, copper (Cu) doped Zinc oxide thin films were prepared by co-precipitation and spin-coating method. Cu doping content was varied up to 5 at. %. Morphological and structural characteristics of the synthesized films were analyzed by Atomic Force Microscopy (AFM), X-Ray Diffraction (XRD) and Raman Spectroscopy. XRD measurements demonstrated that films were polycrystalline with hexagonal phase. AFM investigations revealed uniform repartition of nanocrystallites. Optical band-gap has been tuned from 3.26 eV for undoped ZnO film to 3.19 eV for 5 at. % Cu doped one. Cu doping revealed significant effect on the optical properties, such as transmission and photoluminescence (PL). An optimum Cu doping of 1 at. % was reported to lead to the highest photoconduction sensitivity, photocurrent density and PL emission intensity. •The synthesized Cu doped ZnO films are very promising candidates for PEC properties.•Cu doped ZnO film has important optical properties.•Cu doped ZnO treatment improves photoconductivity and photoluminescence.