Dielectric relaxation process and AC conductivity of 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetron (Ch-diisoQ) thin films

Thin films of 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetron (Ch-diisoQ) were prepared by thermal evaporation technique. FTIR-spectra confirmed that the thermal evaporation technique is a suitable technique to obtain the appropriate structu...

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2017-10, Vol.28 (19), p.14252-14257
Hauptverfasser:	Qashou, Saleem I., Darwish, A. A. A., Alharbi, S. R., Al Garni, S. E., Hanafy, T. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anthrax Characterization and Evaluation of Materials Chemistry and Materials Science Dielectric relaxation Evaporation Hopping conduction Materials Science Optical and Electronic Materials Silicon Thin films
Online-Zugang:	Volltext
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