Dielectric relaxation process and AC conductivity of 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetron (Ch-diisoQ) thin films

Thin films of 2,9-Bis [2-(4-chlorophenyl)ethyl] anthrax [2,1,9-def:6,5,10-d′e′f′] diisoquinoline-1,3,8,10 (2H,9H) tetron (Ch-diisoQ) were prepared by thermal evaporation technique. FTIR-spectra confirmed that the thermal evaporation technique is a suitable technique to obtain the appropriate structure of Ch-diisoQ thin films. The complex (real and imaginary parts) permittivity of dielectric demonstrates a noteworthy reliance on the frequency and temperature. The dielectric relaxation behavior is explained in terms of electric modulus formalism. The frequencies identical to the maximum of the imaginary electric modulus at different temperatures were found to comply with an Arrhenius law. The calculated activation energy for this relaxation process is 0.24 eV. The frequency reliance of AC conductivity is found to take after Jonscher’s power law with the relevance of the correlated barrier hopping model.