Erratum: A study on N2O direct oxidation process with re-oxidation annealing for the improvement of interface properties in 4H-SiC MOS capacitor

Erratum: A study on N2O direct oxidation process with re-oxidation annealing for the improvement of interface properties in 4H-SiC MOS capacitor

Affiliation of Jinhwan Lee and Kwangsoo Kim was omitted. It should be added as “Department of Electronic Engineering, Sogang University, Seoul 04107, Korea”.

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Veröffentlicht in:Journal of the Korean Physical Society 2017, Vol.71 (5), p.310-310
Hauptverfasser: Cho, Doohyung, Park, Kunsik, Yoo, Seongwook, Kim, Sanggi, Lee, Jinhwan, Kim, Kwangsoo
Format: Artikel
Sprache:eng
Schlagworte:
Capacitors
Electronic engineering
Erratum
Mathematical and Computational Physics
Nitrous oxide
Oxidation
Particle and Nuclear Physics
Physics
Physics and Astronomy
Theoretical
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Zusammenfassung:Affiliation of Jinhwan Lee and Kwangsoo Kim was omitted. It should be added as “Department of Electronic Engineering, Sogang University, Seoul 04107, Korea”.
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.71.310